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Chemical mechanical polishing liquid and preparation method thereof

A chemical mechanical and polishing fluid technology, which is applied in the direction of polishing compositions containing abrasives, etc., to achieve the effects of reducing surface pollutants, increasing polishing rate, and good polishing effect

Inactive Publication Date: 2016-06-01
章建群
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although my country currently has dozens of companies in the polishing fluid industry, few companies are really involved in the manufacturing and research and development of semiconductor silicon wafer polishing fluids.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A kind of chemical mechanical polishing fluid, the raw material according to weight part comprises: 15 parts of phosphoric acid, 10 parts of sodium tetraborate, 10 parts of sodium silicate, 10 parts of sodium bicarbonate, 10 parts of sodium citrate, 25 parts of deionized water, talcum powder 10 parts, 8 parts of calcium carbonate, 1 part of oxidizing agent, 5 parts of liquid paraffin, 2 parts of corrosion inhibitor, 1 part of surfactant, 1 part of pH regulator, 1 part of kaolin, 1 part of diatomaceous earth, mica with lamellar structure 1 part powder, 1 part hollow glass microsphere.

[0018] The preparation method of described chemical mechanical polishing fluid, comprises the following steps:

[0019] (1) Phosphoric acid, sodium tetraborate, sodium silicate, sodium bicarbonate, sodium citrate, talcum powder, calcium carbonate, liquid paraffin, corrosion inhibitor, kaolin, diatomaceous earth, mica powder with lamellar structure, hollow glass Dissolve microbeads in dei...

Embodiment 2

[0023] A kind of chemical mechanical polishing liquid, the raw material according to weight part comprises: 15-30 parts of phosphoric acid, 15 parts of sodium tetraborate, 15 parts of sodium silicate, 15 parts of sodium bicarbonate, 15 parts of sodium citrate, 35 parts of deionized water, 12.5 parts of talcum powder, 9 parts of calcium carbonate, 5.5 parts of oxidizing agent, 7.5 parts of liquid paraffin, 6 parts of corrosion inhibitor, 5.5 parts of surfactant, 5 parts of pH regulator, 2 parts of kaolin, 1.5 parts of diatomaceous earth, lamellar structure 1.5 parts of mica powder and 1.5 parts of hollow glass microspheres.

[0024] The preparation method of described chemical mechanical polishing fluid, comprises the following steps:

[0025] (1) Phosphoric acid, sodium tetraborate, sodium silicate, sodium bicarbonate, sodium citrate, talcum powder, calcium carbonate, liquid paraffin, corrosion inhibitor, kaolin, diatomaceous earth, mica powder with lamellar structure, hollow ...

Embodiment 3

[0029] A kind of chemical mechanical polishing liquid, the raw material according to weight part comprises: 30 parts of phosphoric acid, 20 parts of sodium tetraborate, 20 parts of sodium silicate, 20 parts of sodium bicarbonate, 20 parts of sodium citrate, 45 parts of deionized water, talcum powder 15 parts, 10 parts of calcium carbonate, 10 parts of oxidizing agent, 10 parts of liquid paraffin, 10 parts of corrosion inhibitor, 10 parts of surfactant, 9 parts of pH regulator, 3 parts of kaolin, 2 parts of diatomaceous earth, mica with lamellar structure 2 parts powder, 2 parts hollow glass microspheres.

[0030] The preparation method of described chemical mechanical polishing fluid, comprises the following steps:

[0031] (1) Phosphoric acid, sodium tetraborate, sodium silicate, sodium bicarbonate, sodium citrate, talcum powder, calcium carbonate, liquid paraffin, corrosion inhibitor, kaolin, diatomaceous earth, mica powder with lamellar structure, hollow glass Dissolve mic...

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PUM

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Abstract

The invention discloses a chemical mechanical polishing liquid and a preparation method thereof. The chemical mechanical polishing liquid is prepared from, by weight, 15-30 parts of phosphoric acid, 10-20 parts of sodium tetraborate, 10-20 parts of sodium silicate, 10-20 parts of sodium bicarbonate, 10-20 parts of sodium citrate, 25-45 parts of deionized water, 10-15 parts of talcum powder, 8-10 parts of calcium carbonate, 1-10 parts of oxidizing agent, 5-10 parts of liquid paraffin, 2-10 parts of corrosion inhibitor, 1-10 parts of surfactant, 1-9 parts of pH regulator, 1-3 parts of kaolin, 1-2 parts of diatomite, 1-2 parts of lamellar mica powder and 1-2 parts of hollow glass beads. The raw materials are stirred, heated and mixed to obtain the chemical mechanical polishing liquid. The chemical mechanical polishing liquid is effective in polishing, harmless to surfaces of semiconductor chips, safe, nontoxic, free of harmful gases and capable of increasing polishing speed and reducing surface contaminants of polishes materials.

Description

technical field [0001] The invention relates to the field of semiconductor surface treatment, in particular to a chemical mechanical polishing liquid and a preparation method thereof. Background technique [0002] Chemical mechanical polishing technology is one of the key technologies for surface processing of semiconductor wafers, and it is used to planarize the surface at each stage of the integrated circuit manufacturing process, and the polishing liquid has an important impact on the polishing efficiency and processing quality, but due to high technical requirements , the current commercialized polishing fluid formula is in a state of complete secrecy, mainly concentrated in the United States, Japan, and South Korea. This has also led to the fact that most of the polishing fluid used in the processing of semiconductor silicon polishing wafers in my country must be imported. Although my country currently has dozens of enterprises in the polishing liquid industry, there a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C23F3/06
CPCC09G1/02C23F3/06
Inventor 章建群章慧云黄晓伟刘华龚建国
Owner 章建群
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