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Drive control device

A technology of drive control and gate drive, which is applied in the field of drive control devices and can solve problems such as reduction of conduction loss

Active Publication Date: 2016-03-02
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there are cases where the conduction loss cannot be sufficiently reduced by the conventional criteria for judging whether or not current flows in the semiconductor element in the forward direction of the diode element.

Method used

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Experimental program
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no. 1 Embodiment approach

[0083] Below, refer to Figure 1 to Figure 5 A first embodiment of the present application will be described. figure 1 The drive control system shown is used in a power conversion device such as an inverter device that drives an inductive load such as a motor, and a converter device that includes an inductor to step up or step down a DC voltage. Semiconductor elements 1A and 1B as switching elements are arranged in series between the DC power supply line 2 on the high potential side and the DC power supply line 3 on the low potential side with the output terminal Nt interposed therebetween to form a half bridge circuit 4 .

[0084] The semiconductor elements 1A and 1B having the same structure are reverse conduction IGBTs (RC-IGBTs) in which an insulated gate type transistor element 5 and a diode element 6 are formed on the same semiconductor substrate. The energization electrodes (collector, emitter) of the transistor element 5 and the energization electrodes (cathode, anod...

no. 2 Embodiment approach

[0127] For the second embodiment using MOS transistors in the semiconductor elements 1A and 1B, refer to Image 6 and Figure 7 Be explained. The structure of the drive control device 32A, 32B is figure 1as shown. Here, the operation of the low-side drive control device 32B will be mainly described. The function of the drive control device 32A on the high side is also the same.

[0128] When using MOS transistors as the semiconductor elements 1A and 1B, the switching signal Sk is switched to H level, for example. The drive control device 32B sets the current threshold It based on the threshold voltage Vt input from the threshold setting circuit 29B, and executes Vf control.

[0129] Image 6 is a voltage-current characteristic diagram when a current flows in the forward direction of the diode element 6 in the MOS transistor. The magnitude relationship between the forward voltage Vf of the diode element 6 when the gate drive voltage is cut off and the drain-source volta...

Embodiment approach

[0202] Figure 20 Showing the twelfth embodiment, Figure 21 The thirteenth embodiment is shown, and drive control devices 152 and 154 using drive ICs 151 and 153 both having a high withstand voltage are shown. The high withstand voltage refers to a withstand voltage corresponding to the power supply voltage applied to the half-bridge circuit 4 . The drive control devices 152 and 154 drive and control the two semiconductor elements 101A and 101B constituting the half-bridge circuit 4 .

[0203] The drive ICs 151 and 153 include a common Vf control unit 26 and a common pulse control unit 27 for the semiconductor elements 101A and 101B, and operate when supplied with a power supply voltage VDD (for example, 15V). The gate drive signal SGH is given to the semiconductor element 101A via the level shifter 57 and the drive circuit 28 , and the gate drive signal SGL is given to the semiconductor element 101B via the drive circuit 28 .

[0204] Drive IC 151 includes voltage detecti...

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Abstract

This drive control device (32A, 32B, 52, 54, 56, 61, 62, 71, 72) of two semiconductor elements (1A, 1B) having a diode structure (6) and a transistor structure (5) having a powered electrode (15, 18) in common is provided with: a current detection means (7A, 7B, 25, 59, 60, 68) that outputs a current detection signal of the semiconductor elements; and a first control means (27) that, when it has been determined that current is flowing in the forward direction of the diode structure in the semiconductor element during the period that an on command signal is being input to the semiconductor element, outputs a gate drive signal from the point in time that a first time has elapsed to the point of time a second time has elapsed relative to the point in time that a subsequent off command signal is input. The first time and second time are pre-set in a manner such that an arm short-circuit does not arise between the two semiconductor elements.

Description

[0001] Cross References to Related Applications [0002] This application is based on Japanese Patent Application No. 2013-144561 filed on July 10, 2013, Japanese Patent Application No. 2013-144560 filed on July 10, 2013, and Japanese Patent Application No. 2014 filed on June 30, 2014. 2014-134227, the contents of which are quoted here. technical field [0003] The present application relates to a drive control device for a semiconductor element in which an insulated gate transistor structure and a diode structure are formed on the same semiconductor substrate. Background technique [0004] It is known that transistor elements such as RC-IGBT, MOS transistors, and diodes with MOS gates and diode elements are formed on the same semiconductor substrate, and the conduction electrodes (collector, emitter or drain, source) of the transistor elements are known. A semiconductor element having a common electrode (cathode, anode) to a diode element (see Non-Patent Document 1). When...

Claims

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Application Information

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IPC IPC(8): H02M1/08H01L21/8234H01L27/06H03K17/687
CPCH01L27/0727H02M1/08H02M1/38H03K17/166H03K17/168H03K17/74H02M1/0009H02M1/0048H02M1/0051H02M1/0054H01L29/0619H01L29/0634H01L29/0638H01L29/7397H01L29/7811H01L29/7813H01L29/7815Y02B70/10H01L27/0207H01L27/0629
Inventor 井上刚志岩村刚宏山本昌弘
Owner DENSO CORP
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