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A kind of silicon-containing alloy target material and preparation method thereof

A silicon alloy and target material technology, which is applied in the field of silicon-containing alloy target material and its preparation, can solve the problems that the density of CrSi products is difficult to meet the target material requirements, the purity is reduced, and the target material is polluted by impurities, and the microstructure is uniform. , high density and low content of impurity elements

Active Publication Date: 2018-05-11
ADVANCED TECHNOLOGY & MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the density of CrSi products obtained by firing method and hot pressing method is difficult to meet the requirements of the target material. The casting method has the disadvantage that the melting furnace is easily corroded and the target material is contaminated by impurities and the purity is reduced.

Method used

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  • A kind of silicon-containing alloy target material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] The chromium-silicon alloy target includes the following atomic percentages: chromium 20%, silicon 80%;

[0057] The preparation method of the chromium-silicon target material of this example comprises the following steps:

[0058] Powder preparation steps: Weigh chromium powder with an average particle size of 35-40 μm and pure silicon powder with an average particle size of 45-75 μm according to the weight ratio corresponding to the atomic percentage of 20% chromium and 80% silicon, and mechanically alloy them by mechanical mixing process Chemical treatment, that is, mixing in a high-energy ball mill for 16 hours under the protection of an inert gas to obtain a uniformly mixed pre-alloyed powder; the average particle size of the obtained pre-alloyed powder is 40-50 μm;

[0059] Cold isostatic pressing treatment steps: put the pre-alloyed powder into a cold isostatic pressing forming mold for cold isostatic pressing treatment. During the treatment process, the cold iso...

Embodiment 2

[0065] The chromium-silicon alloy target includes the following atomic percentages: 70% chromium and 30% silicon.

[0066] The preparation method of the chromium-silicon target material of this example comprises the following steps:

[0067] Powder preparation steps: according to the weight ratio corresponding to 70% chromium and 30% silicon by atomic percentage, weigh chromium powder with an average particle size of 20-45 μm and silicon-chromium alloy powder with an average particle size of 35-45 μm, and mix them in a V-shaped Mix in the mixer for 3h to 10h, vacuumize for protection during the mixing process, and the vacuum degree is lower than 10 -4 Pa, thus obtaining a uniformly mixed pre-alloyed powder; the average particle size of the obtained pre-alloyed powder is 30-40 μm;

[0068] Cold isostatic pressing treatment step: put the pre-alloyed powder into a cold isostatic pressing forming mold for cold isostatic pressing treatment. During the treatment process, the cold ...

Embodiment 3

[0075] The chromium-silicon alloy target consists of the following atomic percentages: 50% chromium and 50% silicon. The preparation method of the chromium-silicon target material of this example comprises the following steps:

[0076] Powder preparation steps: according to the weight ratio corresponding to 50% chromium and 50% silicon by atomic percentage, weigh chromium powder with an average particle size of 20-45 μm and chromium-silicon alloy powder with an average particle size of 45-75 μm and mix them in a high-energy ball mill for 5 hours. Vacuumize and fill with high-purity argon for protection during the mixing process to obtain uniformly mixed pre-alloyed powder; the average particle size of the obtained pre-alloyed powder is 35-45 μm;

[0077] Cold isostatic pressing treatment step: put the pre-alloyed powder into a cold isostatic pressing forming mold for cold isostatic pressing treatment. During the treatment process, the cold isostatic pressing pressure is 200 MP...

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Abstract

The invention belongs to the technical field of powder metallurgy material preparation and provides a silicon-containing alloy target material and a preparation method thereof. The silicon content in the target composition is 0

Description

technical field [0001] The invention relates to the technical field of powder metallurgy material preparation, in particular to a silicon-containing alloy target material and a preparation method thereof. Background technique [0002] The target is the key material in the surface coating technology. The performance of the target directly affects the performance of the film, and the performance of the target is mainly determined by the production process of the target. At present, the target production methods mainly include smelting method and powder metallurgy method. The smelting process can produce most metal targets, but a small number of targets can only be prepared by powder metallurgy process due to factors such as the large difference in the melting point of the alloy composition and the strict control of the grain size of the target. [0003] The application of hybrid integrated circuits in electronic component materials is becoming more and more extensive, and the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34B22F3/02B22F3/04
Inventor 张凤戈张路长姚伟缪磊穆健刚何向晖郝权孙继洲
Owner ADVANCED TECHNOLOGY & MATERIALS CO LTD
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