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Diamond trepanning drill bit for sapphire crystal bar taking and preparing method of diamond trepanning drill bit

A diamond cutter head and diamond technology, applied in the direction of drill bits, drilling equipment, earthwork drilling and mining, etc., can solve the problems of poor concentricity between the diamond casing drill bit and the drill pipe, improve chip removal effect, increase the life of the drill bit, reduce the The effect of rings and missing teeth

Active Publication Date: 2015-09-16
BEIJING GANG YAN DIAMOND PROD CO +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to at least solve the problem of poor concentricity between the diamond casing drill and the drill pipe, the invention provides a diamond casing drill for sapphire rod digging and a preparation method thereof

Method used

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  • Diamond trepanning drill bit for sapphire crystal bar taking and preparing method of diamond trepanning drill bit
  • Diamond trepanning drill bit for sapphire crystal bar taking and preparing method of diamond trepanning drill bit
  • Diamond trepanning drill bit for sapphire crystal bar taking and preparing method of diamond trepanning drill bit

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preparation example Construction

[0039] The present invention also provides a kind of preparation method of above-mentioned diamond casing bit, is used for preparing above-mentioned diamond casing bit, and this preparation method comprises:

[0040] The rough machining preparation step of the diamond cutter head is to prepare the diamond cutter head blank; the welding step is to weld the drill pipe and the joint together, and the diamond cutter head blank and the drill pipe are laser welded together to form the diamond sleeve drill bit blank; the finishing preparation Step 1: Carry out grinding and sharpening treatment and finished product inspection on the diamond cutter head blank of the diamond nesting drill bit blank, so as to obtain the diamond nesting drill bit.

[0041] In the welding step, an annular welding step is processed along the axial direction of the diamond cutter head blank on the end face of the diamond cutter head blank connected to the drill pipe, and the annular welding step is packed int...

Embodiment 1

[0053] (1) take working layer metal powder by weight: 12 parts of iron powders, 33 parts of cobalt powders, 50 parts of copper powders, 5 parts of tin powders and the diamond that accounts for 55% of working layer gross weight ratio carry out compounding; Add glycerin and alcohol when the layer metal powder and diamond are mixed, the amount of glycerin and alcohol added is 1% and 1.5% of the sum of the working layer metal powder and diamond mass respectively, and the mixing time is 4 hours. The cutter head transition layer contains iron, cobalt and copper powder, and takes by weight 52 parts of iron powder, 40 parts of copper powder and 8 parts of cobalt powder compound; when the transition layer metal powder is mixed, alcohol is added, and the amount of alcohol added is the transition layer 1.5% of the mass of metal powder, the mixing time is 2.5 hours. After the working layer powder (including diamond) and the transition layer powder are mixed, add glue and granulate respect...

Embodiment 2

[0059] (1) take working layer metal powder by weight: 34 parts of iron powders, 22 parts of cobalt powders, 42 parts of copper powders, 2 parts of tin powders and the diamond that accounts for 35% of working layer gross weight ratio carry out compounding; Glycerin and alcohol should be added when the layer metal powder and diamond are mixed. The amount of glycerin and alcohol added is 1% and 1.5% of the sum of the working layer metal powder and diamond mass respectively, and the mixing time is 5 hours. The cutter head transition layer contains iron-cobalt copper powder, and takes by weight 52 parts of iron powder, 40 parts of copper powder and 8 parts of cobalt powder for compounding; when the transition layer metal powder is mixed, alcohol is added, and the addition of alcohol is transition 1.5% of the mass of the layer metal powder, and the mixing time is 2 hours. After the working layer powder (including diamond) and the transition layer powder are mixed, add glue and granu...

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Abstract

The invention belongs to the technical field of ultra-hard material tool manufacturing, and discloses a diamond trepanning drill bit for sapphire crystal bar taking and a preparing method of the diamond trepanning drill bit. The diamond trepanning drill bit comprises a joint, a drill pipe and a diamond tool bit, wherein the joint is arranged on a main shaft of a sapphire crystal bar taking machine; the drill pipe is in a tubular shape; the bottom end of the drill pipe is connected with the joint; the diamond tool bit is in an annular shape and is integrally formed; and the bottom end of the diamond tool bit is connected with the top end of the drill pipe through laser welding, so that a hollow cavity is formed by the drill pipe and the diamond tool bit. The preparing method of the diamond trepanning drill bit comprises the following steps including a diamond tool bit rough processing and preparing step, a welding step and a fine processing and preparing step. Through the scheme, the goal of improving the concentricity of the concentricity and the drill pipe is achieved.

Description

technical field [0001] The invention belongs to the technical field of superhard material tool manufacturing, and in particular relates to a diamond casing drill bit for sapphire rod digging and a preparation method thereof. Background technique [0002] Sapphire single crystal has a series of excellent physical and chemical properties: melting point 2050°C, high hardness, high temperature resistance, strong resistance to cosmic ray radiation, good electrical insulation, thermal conductivity and chemical stability, small dielectric constant, medium Low loss, good transmittance in the 0.2μm~5.5μm band. Based on the above-mentioned excellent performance of sapphire single crystal, the application of sapphire has the following aspects: form a single crystal silicon film on a sapphire substrate, and then use a CMOS process to form a circuit, as an SOS substrate using sapphire with good insulation, which can reduce the temperature on the substrate. The formed circuit consumes po...

Claims

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Application Information

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IPC IPC(8): E21B10/46B22F1/00B22F7/06
Inventor 徐良刘一波刘少华罗晓丽
Owner BEIJING GANG YAN DIAMOND PROD CO
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