Preparation method of hexagonal boron nitride powder and three-dimensional boron nitride

A technology of hexagonal boron nitride and boron nitride, which is applied in the fields of chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve the problems of low volume density and unfavorable macro-production, and achieve high density, large-scale preparation and wide application foreground effect

Inactive Publication Date: 2015-07-29
FUDAN UNIV
View PDF4 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the network pores of metal foam are as high as hundreds of microns, and the three-dimensional boron ...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of hexagonal boron nitride powder and three-dimensional boron nitride
  • Preparation method of hexagonal boron nitride powder and three-dimensional boron nitride
  • Preparation method of hexagonal boron nitride powder and three-dimensional boron nitride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Embodiment 1, at first, the preparatory work before reaction: 0.5 gram borane ammonium complex (boron, nitrogen source), 0.5 gram nickel powder (catalyst) are packed in the same quartz tube, wherein, borane ammonia place quartz tube The front end is wrapped with a heating jacket, and the quartz tube where the nickel powder is located is placed in a tube furnace. Turn on the vacuum pump to evacuate the air pressure inside the quartz tube to 5×10 -3 Below Torr, a flow rate of 400 ml per minute of argon is introduced to flush the air pressure back to normal pressure, and the argon is continued to be introduced to exhaust the air (at this time until the end of the reaction, the gas outlet valve is opened to maintain the normal pressure environment), at 50 ℃ The temperature of the tube furnace was raised to 1000 degrees Celsius at a rate of 1 minute, and then the argon gas was turned off, and 200 milliliters of hydrogen gas per minute was introduced to reduce and anneal the ...

Embodiment 2

[0035] Embodiment 2, preparation method is basically the same as embodiment 1, and difference is: adopt copper powder as catalyst, the solution of post-etching catalyst adopts the hydrochloric acid mixed solution of 1 mole per liter of iron trichloride and 0.1 mole per liter, can Obtain hexagonal boron nitride powder.

[0036] 2. Preparation of three-dimensional boron nitride

Embodiment 3

[0037] Embodiment 3, preparation method is basically the same as embodiment 1, also adopts nickel powder to make catalyst. The difference is in the sample treatment part after growth: before etching the nickel skeleton with 3 moles per liter of hydrochloric acid, the sample was first immersed in anisole solution of polymethyl methacrylate (4% by mass) for 10 After a few minutes remove to dry. After etching the catalyst, three-dimensional boron nitride (such as image 3 ), and then dissolve and remove polymethyl methacrylate with acetone to obtain three-dimensional boron nitride.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of inorganic synthesis, and particularly relates to a preparation method of hexagonal boron nitride powder and three-dimensional boron nitride. According to the preparation method, a chemical vapor deposition method is adopted, transition metal elementary substance powder or a compound containing transition metal elements is taken as a catalyst, and a porous metal catalyst skeleton is prepared through high-temperature reduction reaction; hexagonal boron nitride grows with the chemical vapor deposition method so as to obtain the hexagonal boron nitride powder with the catalyst skeleton and the three-dimensional boron nitride. According to the preparation method, the operation is simple and convenient, the requirement for equipment is low, and the yield is high; the hexagonal boron nitride powder and the three-dimensional boron nitride can be rapidly and massively prepared, the obtained three-dimensional boron nitride has the advantages of small space ranging from 100 nanometers to 100 micrometers, high density up to 100 mg/ cm<3> and the like, the three-dimensional boron nitride and the boron nitride powder have the wide application prospect in the aspects of space heat conduction, catalyst carriers, sound absorption, shock resistance and the like.

Description

technical field [0001] The invention belongs to the technical field of inorganic synthesis, and in particular relates to a method for preparing hexagonal boron nitride powder and a three-dimensional structure. Background technique [0002] Nano-hexagonal boron nitride is a two-dimensional material similar to graphene, and it is also a new type of ceramic material with excellent performance and great development potential, because of its high temperature oxidation resistance, radiation resistance, high thermal conductivity, high temperature lubrication It is widely used in the fields of metallurgy, aerospace, electronics and nuclear industry due to its good properties of properties, dielectric properties and insulation properties. The hexagonal boron nitride powder material is based on a three-dimensional network structure formed by two-dimensional boron nitride nanosheets through spatial crosslinking. In addition to the properties of two-dimensional boron nitride nanosheets,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B21/064B82Y30/00
Inventor 魏大程夏冬云李孟林李科亓国强曹敏张彩云蔡智彭兰刘冬华
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap