CMOS (complementary metal-oxide semiconductor) infrared detector reading-out circuit capable of realizing element-by-element dark current suppression

Abstract

The invention discloses a CMOS (complementary metal-oxide semiconductor) infrared detector reading-out circuit capable of realizing element-by-elementdark current suppression. The CMOS infrared detector reading-out circuit comprises input circuit, an integration circuit and an output circuit, the input circuit is of a structure combining current storage units with current mirrors, the current storage units are distributed in each pixel of a linear array circuit, each current storage unit is composed of a transmission gate, a virtual switch pair and a capacitance coupling loop, and customized modulation of dark current can be realized; the current mirrors are arranged at the left end and right end of the linear array circuit, and integral suppression of dark current can be realized. The CMOS infrared detector reading-out circuit has the advantages that the current storage units at an input end are designed, so that detector signal heterogeneity can be lowered effectively; the current mirrors at the input end are provided with a rough tuning port and a fine tuning port, so that scope of application, to medium-long-wave infrared detector working current, of the CMOS infrared detector reading-out circuit is expanded, and working state of a system can be adjusted accurately; the CMOS infrared detector reading-out circuit is low in power consumption, and is manufactured by adopting a submicron CMOS process, thereby being high in repeatability.

Description

technical field [0001] The invention relates to the field of readout circuits of infrared detectors, in particular to a design of CMOS readout circuits for line array medium and long wave infrared detectors. Background technique [0002] Mid- and long-wave infrared detectors have extremely important uses in the fields of low-temperature target detection, over-the-horizon detection, and anti-jamming target recognition, so they have always been an important direction for the development of infrared detector technology. At present, medium-wave detectors (with a wavelength of 3.5-4 μm) are still dominated by HgCdTe detectors, which generally work in a high background and will generate a large background current. At the same time, the dark current of the HgCdTe medium-long-wave infrared device itself is relatively large, and there is relatively large non-uniformity. When the signal is read out, the signal of each element is prone to unevenness, and some signals cannot be read out...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a CMOS infrared detector readout circuit with element-by-element dark current suppression, which solves the problem that the output swing of the circuit is too small due to the non-uniformity of the detector, thereby improving the readout of the medium and long wave infrared detector. The design level of the output circuit

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