Method of forming semiconductor device

Abstract

The invention provides a forming method of a semiconductor device. The method comprises the following steps that a semiconductor substrate is provided, and a grid dielectric film and a grid conducting film are sequentially formed on the surface of the semiconductor substrate; the grid dielectric film and a grid conducting film are subjected to patterning for forming a grid electrode structure, and the grid electrode structure comprises a grid dielectric layer and a grid conducting layer; a deposition process is adopted for forming insulation layers at the surfaces of the semiconductor substrate positioned at the two sides of the grid electrode structure, the tops of the insulation layers are higher than the top of the grid dielectric layer; the grid electrode structure is subjected to a re-oxidation process, an oxidation layer is formed on the surface of the grid electrode structure, and the oxidation layer is also positioned on the surface of the insulation layer; and the semiconductor substrate positioned at the two sides of the grid electrode structure is subjected to doping for forming a doping region. The semiconductor device formed by the method has the advantages that the completeness of the grid dielectric layer can be effectively maintained, the thickness change of the grid dielectric layer can be prevented, the reliability of the semiconductor device is improved, the oxidation enhancing diffusion effect is reduced, the short channel effect is inhibited, and the electric performance of the semiconductor device is optimized.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] Metal-oxide-semiconductor (MOS: Metal-Oxide-Semiconductor) transistors are the most basic devices in semiconductor manufacturing, and they are widely used in various integrated circuits. For NMOS transistors and PMOS transistors. [0003] A typical semiconductor device formation process includes the following steps, please refer to figure 1 Step S1, providing a semiconductor substrate, forming a gate dielectric film and a gate conductive film on the surface of the semiconductor substrate in turn; Step S2, forming a patterned photoresist layer on the surface of the gate conductive film; Step S3, with the The patterned photoresist layer is used as a mask, and the gate conductive film and the gate dielectric film are sequentially dry-etched to form a gate structure on the surface...

AI Technical Summary

Problems solved by technology

[0004] However, the electrical performance and reliability of semiconductor devices formed in the prior art need to be improved, for example, the leakage current in semiconductor devices is large and the breakdown voltage is low

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