Organic electroluminescence device and preparation method thereof
An electroluminescent device and a luminescent technology, which are applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor film-forming properties of lithium fluoride, easy formation of electronic defects, and electronic quenching
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[0035] The preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:
[0036] Step S110 , sequentially forming a hole injection layer 20 , a hole transport layer 30 , a light emitting layer 40 , an electron transport layer 50 and an electron injection layer 60 on the surface of the anode 10 .
[0037] The anode 10 is indium tin oxide glass (ITO), fluorine-doped tin oxide glass (FTO), aluminum-doped zinc oxide glass (AZO) or indium-doped zinc oxide glass (IZO), preferably ITO, and the thickness of the anode 10 is 50 nm to 300 nm, preferably 120 nm.
[0038]In this embodiment, before the hole injection layer 20 is formed on the surface of the anode 10, the anode 10 is pretreated. The pretreatment includes: performing photolithography on the anode 10, cutting it into the required size, using detergent, deionized Water, acetone, ethanol, and isopropanone were each ultrasonically cleaned for 15 minutes to remove organic po...
Embodiment 1
[0054] The structure prepared in this example is ITO / MoO 3 / TCTA / Alq 3 / Bphen / Rb 2 CO 3 :CuPc:Ag / Ag organic electroluminescent device, in this embodiment and the following embodiments, " / " indicates a layer, and ":" indicates doping.
[0055] First, carry out photolithography treatment on ITO, cut it into the required size, and then use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface; clean the conductive substrate Proper treatment: oxygen plasma treatment, treatment time is 5min, power is 30W; thickness is 130nm, hole injection layer is evaporated, material is MoO 3 , with a thickness of 40nm; the vapor-deposited hole transport layer, the material is TCTA, and the thickness is 25nm; the vapor-deposited light-emitting layer, the material is Alq 3 , with a thickness of 14nm; the vapor-deposited electron transport layer, the material is Bphen, and the thickness is 80nm; the electr...
Embodiment 2
[0062] The structure prepared in this example is AZO / V 2 o 5 / TAPC / DCJTB / TAZ / RbCl:CuI:Al / Al organic electroluminescence device.
[0063]First, use detergent, deionized water, and ultrasound on the AZO glass substrate for 15 minutes to remove organic pollutants on the glass surface; evaporate the hole injection layer: the material is V 2 o 5 , with a thickness of 40nm; evaporated hole transport layer: the material is TAPC, with a thickness of 45nm; evaporated luminescent layer: the selected material is DCJTB, with a thickness of 8nm; evaporated electron transport layer, the material is TAZ, with a thickness of 65nm; Electron beam evaporation electron injection layer, the material is RbCl:CuI:Al, RbCl, the mass ratio between CuI and Al is 2:0.1:1, the thickness is 60nm, the material is Al, and the thickness is 80nm.
[0064] The specific process conditions of the electron beam evaporation method are: the working pressure is 2×10 -3 Pa, the energy density of electron beam eva...
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