Organic electroluminescence device and preparation method thereof
An electroluminescent device and electroluminescent technology, which are applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as reducing the probability of electron and hole recombination, electron quenching, and organic functional layer damage, etc. To achieve the effect of improving electron transfer rate, improving electron injection efficiency, and improving luminous efficiency
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[0033] The preparation method of the organic electroluminescent device 100 according to an embodiment includes the following steps:
[0034]In step S110 , a hole injection layer 20 , a hole transport layer 30 , a light emitting layer 40 , an electron transport layer 50 and an electron injection layer 60 are sequentially formed on the surface of the anode 10 .
[0035] The anode 10 is indium tin oxide glass (ITO), fluorine-doped tin oxide glass (FTO), aluminum-doped zinc oxide glass (AZO) or indium-doped zinc oxide glass (IZO), preferably ITO, the thickness of the anode 10 It is 50 nm to 300 nm, preferably 130 nm.
[0036] In this embodiment, before the hole injection layer 20 is formed on the surface of the anode 10, the anode 10 is pre-treated. The pre-treatment includes: subjecting the anode 10 to photolithography, cutting it into a required size, using detergent, deionization Water, acetone, ethanol, and isoacetone were each ultrasonically cleaned for 15 minutes to remove ...
Embodiment 1
[0050] The structure prepared in this example is ITO / MoO 3 / NPB / Alq 3 / Bphen / Rb 2 CO 3 :Alq 3 : organic electroluminescent device of LiF / Ag, in this embodiment and the following embodiments, " / " indicates layer, ":" indicates doping.
[0051] Magnetron sputtering anode on glass substrate, the material is ITO, and then photolithographic processing, cut to the required size, followed by detergent, deionized water, acetone, ethanol, isopropanol and ultrasonic for 15min each to remove the glass surface After cleaning, conduct appropriate treatment on the conductive substrate: oxygen plasma treatment, the treatment time is 5min, the power is 30W; the thickness is 130nm, the hole injection layer is evaporated, and the material is MoO 3 , the thickness is 40nm; the vapor-deposited hole transport layer is made of NPB and the thickness is 30nm; the vapor-deposited light-emitting layer is made of Alq 3 , the thickness is 17nm; the electron transport layer is evaporated, the materia...
Embodiment 2
[0058] The structure prepared in this example is IZO / V 2 O 5 / TCTA / DCJTB / TPBi / RbCl:Bphen:Li 2 O / Al organic electroluminescent devices.
[0059]Magnetron sputtering anode on the glass substrate, the material is IZO, and then photolithography treatment, cut to the required size, followed by detergent, deionized water, ultrasonic for 15min, remove the organic pollutants on the glass surface; Hole injection layer: material is V 2 O 5 , the thickness is 40nm; the vapor-deposited hole transport layer: the material is TCTA, the thickness is 45nm; the vapor-deposited light-emitting layer: the selected material is DCJTB, the thickness is 8nm; the vapor-deposited electron transport layer, the material is TPBi, the thickness is 65nm; Electron injection layer plating, the material is RbCl:Bphen:Li 2 O, RbCl, Bphen and Li 2 The mass ratio between O is 7:2:1, and the thickness is 20 nm; for the vapor deposition cathode, the material is Al, and the thickness is 80 nm.
[0060] The spe...
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