Near infrared LED and production method thereof

Abstract

The invention provides a near infrared LED and a production method thereof, and belongs to the technical field of photoelectron. The method comprises the steps of forming an epitaxial wafer on a temporary substrate; manufacturing a transparent conductive layer on a current expansion layer of the epitaxial wafer; annealing to enable the transmission rate and square resistance of the transparent conductive layer; enabling the transparent conductive layer to be opposite to a transparent permanent substrate; integrally adhering the epitaxial wafer and the transparent permanent substrate through adhesive; removing the temporary substrate, a N-GaAs buffer layer and a N-GaInP stop layer; exposing an N-GaAs ohm contact layer; corroding to form a pattern; roughing; manufacturing a first electrode on the patterned N-GaAs area; annealing to electrically connect the first electrode and the N-GaAs. With the adoption of the method, the transmission rate of the near infrared wave section is high, and the light outgoing efficiency is further increased; the parallel structures of the electrodes at the P side and the N side can be achieved; the transparent conductive layer is also an anti-reflection film which increases the light picking efficiency.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, in particular to the technical field of manufacturing AlGaAs ternary system near-infrared light-emitting diodes. Background technique [0002] Infrared light-emitting diodes are widely used in remote control, medical equipment, space communication, infrared lighting and other fields due to their specific wavelength band, low power consumption and high reliability. [0003] Traditional high-brightness AlGaAs near-infrared light-emitting diodes mainly use metal bonding technology to realize substrate replacement, and use silicon substrates with better thermal conductivity (the thermal conductivity of silicon is about 1.5W / K.cm) to replace gallium arsenide linings. bottom (the thermal conductivity of gallium arsenide is about 0.8W / K.cm), the chip has lower thermal resistance and better heat dissipation performance, but because the silicon substrate is opaque and still has the problem of ...

AI Technical Summary

Problems solved by technology

[0003] Traditional high-brightness AlGaAs near-infrared light-emitting diodes mainly use metal bonding technology to realize substrate replacement, and use silicon substrates with better thermal conductivity (the thermal conductivity of silicon is about 1.5W / K.cm) to replace gallium arsenide linings. bottom (the thermal conductivity of gallium arsenide is about 0.8W / K.cm), the chip has lower thermal resistance and better heat dissipation performance, but because the silicon substrate is opaque and still has the problem of shading light, it is still necessary to make a reflector , the ODR mirror is generally made on P-AlGaAs, the mirror is mainly composed of a low refractive index dielectric film and a high reflectivity metal layer, although the reflectivity of the ODR mirror can reach more than 90% in the direction of normal incidence, However, the light reflectivity for oblique incidence is low

Since the dielectric film is non-conductive, conductive holes need to be made on the dielectric film, resulting in complicated process

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