Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for manufacturing manganese zinc ferrite film through sol-gel method

A manganese-zinc ferrite and gel method technology, applied in the application of magnetic film to substrate, liquid application, solid-state chemical plating, etc., can solve the problems of target and film composition deviation, target material waste, etc. The effect of suppressing micro-cracks, improving film quality, and smoothing the surface

Active Publication Date: 2015-05-06
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, research institutions at home and abroad have conducted a lot of research on the preparation process of MnZn ferrite films, and various technologies have been developed for the preparation of MnZn ferrite films, such as radio frequency magnetron sputtering, pulsed laser deposition, etc., but these methods are still There are problems such as composition deviation between the target material and the film, and serious waste of the target material. Therefore, it is necessary to find a MnZn ferrite film preparation that is simple in process, can accurately control the film composition, is easy to form a large area film, and is compatible with the integration process. technology is urgent

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing manganese zinc ferrite film through sol-gel method
  • Method for manufacturing manganese zinc ferrite film through sol-gel method
  • Method for manufacturing manganese zinc ferrite film through sol-gel method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1. Dilute ferric nitrate and zinc nitrate by Mn 0.5 Zn 0.5 Fe 2 o 4 The stoichiometric ratio is weighed, and the iron nitrate and nitric acid obtained by weighing are dissolved in deionized water, and a yellow transparent solution is obtained through magnetic stirring;

[0026] 2. Use a pipette to measure manganese nitrate solution with a certain stoichiometric ratio and add it to the mixed solution obtained in step 1. Add citric acid as a complexing agent at the same time. The molar ratio of citric acid and manganese nitrate is 2:1. Stir at 60°C until clear;

[0027] 3. Add an appropriate amount of ammonia water to the mixed solution obtained in step 2, adjust the pH value of the mixed solution to 6-7, and obtain a sol, and the concentration of the sol is controlled at 0.1Mol / l. Then add 0.5 g of polyvinylpyrrolidone, and continue to stir at 60°C until clear to obtain a yellow uniform, stable MnZn ferrite sol;

[0028] 4. Clean the silicon wafer with a mixed aqueo...

Embodiment 2

[0038] 1. Dilute ferric nitrate and zinc nitrate by Mn 0.5 Zn 0.5 Fe 2 o 4 The stoichiometric ratio is weighed, and the iron nitrate and nitric acid obtained by weighing are dissolved in deionized water, and magnetically stirred to obtain a yellow transparent solution;

[0039]2. Use a pipette to measure manganese nitrate solution with a certain stoichiometric ratio and add it to the mixed solution obtained in step 1. Add citric acid as a complexing agent at the same time. The molar ratio of citric acid and manganese nitrate is 2:1. Stir at 60°C until clear;

[0040] 3. Add an appropriate amount of ammonia water to the mixed solution obtained in step 2, adjust the pH value of the solution to about 7, and obtain a sol, and the concentration of the sol is controlled at 0.2Mol / l. Then add 0.5 g of polyvinylpyrrolidone, and continue to stir at 60°C until clear to obtain a yellow uniform, stable MnZn ferrite sol;

[0041] 4. Clean the silicon wafer with a mixed aqueous solutio...

Embodiment 3

[0046] 1. Dilute ferric nitrate and zinc nitrate by Mn 0.5 Zn 0.5 Fe 2 o 4 The stoichiometric ratio is weighed, and the iron nitrate and nitric acid obtained by weighing are dissolved in deionized water, and magnetically stirred to obtain a yellow transparent solution;

[0047] 2. Use a pipette to measure manganese nitrate solution with a certain stoichiometric ratio and add it to the mixed solution obtained in step 1. Add citric acid as a complexing agent at the same time. The molar ratio of citric acid and manganese nitrate is 2:1. Stir at 60°C until clear;

[0048] 3. Add an appropriate amount of ammonia water to the mixed solution obtained in step 2, adjust the pH value of the solution to be around 7, and obtain a sol, and the concentration of the sol is controlled at 0.2Mol / l. Then add 0.6 g of polyvinylpyrrolidone, and continue to stir at 60°C until clear to obtain a uniform yellow, stable MnZn ferrite sol;

[0049] 4. Clean the silicon wafer with a mixed aqueous so...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Disclosed is a method for manufacturing a manganese zinc ferrite film through a sol-gel method. The method comprises the steps that 1, ferric nitrate and zinc nitrate are weighed according to the Mn<0.5>Zn<0.5>Fe<2>O<4> stoichiometric proportion, and the two raw materials are dissolved in deionized water; 2, a manganous nitrate solution is added to a solution obtained in the step 1, citric acid is added as a complexing agent, and a mixed solution is obtained; 3, ammonia water is added to the mixed solution obtained in the step 2, the pH value of the solution is adjusted to range from six to seven, sol is obtained, and then polyvinylpyrrolidone is added in the sol; 4, a silicon substrate is washed through a hydrochloric acid and hydrofluoric acid mixed aqueous solution and is blow-dried through nitrogen; 5, the manganese zinc ferrite sol obtained in the step 3 is dropped on the silicon substrate washed in the step 4, a KW-4A spin coater is used for whirl coating by 2,000-3,000 r / min, the sol is evenly distributed on the surface of the silicon substrate, then after the silicon substrate is placed in a muffle furnace of 250 DEG C to 300 DEG C for heat treatment for 20-30 min, the silicon substrate is heated to 500 DEG C along with the furnace, and the silicon substrate is taken out after heat preservation is kept for 20-30 min. the temperature rise rate along with the furnace is 10-20 DEG C / min, and the furnace temperature change is within + / -5 DEG C.

Description

technical field [0001] The invention relates to a sol-gel method for preparing manganese zinc ferrite (Mn 0.5 Zn 0.5 Fe 2 o 4 ) film method. Background technique [0002] MnZn ferrite is a typical soft magnetic ferrite material with the largest output and widest application. It has a spinel structure (AB 2 o 4 ), has the characteristics of high resistivity, high saturation magnetic induction, high initial permeability and low power loss, and is widely used in telecommunications, instrumentation, automatic control, computer technology and thermoelectric spin energy devices, etc. . At present, the finished product mode of MnZn ferrite mostly depends on the form of sintered bulk material, and its poor processing performance restricts its further application. In the future, electronic components will further develop towards miniaturization and integration, and some devices will develop from three-dimensional solid materials to two-dimensional thin film materials. This is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/20H01F41/24C23C20/08
Inventor 段中夏莫茂松王高翔
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com