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Method for directly preparing metal oxide/silver nanowire composite conductive network

A silver nanowire and composite conductive technology, which is applied in the manufacture of circuits, electrical components, cables/conductors, etc., can solve problems such as complex processes, and achieve the effects of simplifying the preparation process, saving production costs, and high visible light transmittance

Inactive Publication Date: 2015-04-29
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] The present invention solves the technical problem that the silver nanowire / inorganic metal oxide composite conductive film is prepared by a two-step method in the prior art, and the process is complex, and provides a method for directly preparing the metal oxide / silver nanowire composite conductive network

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Titanium dioxide / silver nanowire composite conductive network

[0033] First prepare titanium dioxide sol, mix 1 liter of ethylene glycol methyl ether, 100 ml of ethanolamine, and 200 ml of isopropyl titanate, heat to 80° C. for 4 hours, and obtain a titanium dioxide sol after cooling. Mix 0.1 liter of titanium dioxide sol with 1 liter of silver nanowire ethanol dispersion (silver nanowire concentration 10 mg / mL) to obtain a titanium dioxide / silver nanowire mixed dispersion, and then use vertical pulling method on the monocrystalline silicon solar cell The film is formed on the front side, and the film thickness is controlled at about 90 nanometers. Finally, the composite film is heated on a heating platform at 230°C for 3 minutes, and a transparent conductive titanium dioxide / silver nanowire composite with anti-reflection effect is formed on the front side of the monocrystalline silicon solar cell. Conductive film, the transmittance of the film is 85% in the range of 4...

Embodiment 2

[0035] Zirconium dioxide / silver nanowire composite conductive network

[0036] First prepare the zirconium dioxide sol, mix 1 liter of ethylene glycol methyl ether, 100 ml of ethanolamine, and 200 ml of n-propyl zirconate, heat to 100° C. for 2 hours, and obtain the zirconium dioxide sol after cooling. Mix 1 liter of zirconium dioxide sol with 0.1 liter of silver nanowire isopropanol dispersion (concentration 10 mg / mL) to obtain a mixed dispersion of zirconium dioxide / silver nanowire, and then apply it on a transparent polyamide by scraping method A film is formed on the imine substrate, and finally the composite film is heated in an oven at 200°C for 2 minutes to form a flexible, transparent and conductive zirconia / silver nanowire composite network with a transmittance of 82% in the range of 400-1000nm and a sheet resistance of About 20 ohms.

Embodiment 3

[0038] Tin dioxide / silver nanowire composite conductive network

[0039] First prepare tin dioxide sol, mix 1 liter of ethylene glycol methyl ether, 20 ml of ethanolamine, and 100 ml of tert-butyl stannate, heat to 100° C. for 1 hour, and obtain tin dioxide sol after cooling. 0.5 liters of tin dioxide sol was mixed with 1 liter of silver nanowire ethanol dispersion (concentration 10mg / mL) to obtain a tin dioxide / silver nanowire mixed dispersion, and then formed a film on the glass substrate by a spray gun. Control the spraying time to obtain a film with a film thickness of about 100 nanometers. Finally, the sprayed composite film is heated in an oven at 280°C for 1 minute to form a transparent and conductive tin dioxide / silver nanowire composite network. The transparent network is in the range of 400-1000nm The transmittance is 86%, and the sheet resistance is about 25 ohms.

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Abstract

The invention relates to a method for directly preparing a metal oxide / silver nanowire composite conductive network, belongs to the technical field of transparent conductive thin films and anti-static coating layers, and aims to solve the technical problem that the technology for preparing a silver nanowire / inorganic metal oxide composite conductive thin film by two steps in the prior art is complicated. The method comprises the following steps: preparing a soluble metal oxide precursor solution; mixing the prepared metal oxide precursor solution with dispersion liquid of a silver nanowire to obtain soluble metal oxide / silver nanowire mixing dispersion liquid, and forming a film on the upper surface of a substrate by a wet processing technology; finally performing high-temperature annealing, ultraviolet ozone irradiation or oxygen plasma treatment to obtain the metal oxide / silver nanowire composite conductive network. According to the method, the metal oxide / silver nanowire composite conductive network is prepared in one step, so that the preparation technology is greatly simplified, and the production cost is reduced; the prepared composite conductive network is high in mechanical strength, higher in visible light transmittance and lower in square resistivity.

Description

technical field [0001] The invention relates to the technical field of transparent conductive films and antistatic coatings, in particular to a method for directly preparing a metal oxide / silver nanowire composite conductive network. Background technique [0002] Transparent conductive films have great application value in inorganic thin-film solar cells, organic thin-film solar cells, organic light-emitting diodes, touch screens, and antistatic coatings. Currently widely used transparent conductive films include tin-doped indium oxide (ITO), fluorine-doped tin dioxide (FTO) and aluminum-doped zinc oxide (AZO). Since these inorganic oxide transparent conductive films are prepared by methods such as vacuum sputtering or chemical vapor deposition, the cost thereof is high. Aiming at the problem of high production cost of traditional inorganic oxide transparent conductive films, the transparent conductive network of silver nanowires can be prepared by conventional solution met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00
Inventor 潘道成陶影李伸杰
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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