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Polyimide with low dielectric properties and its preparation method and application

A polyimide and low dielectric technology, applied in the field of material science, can solve the problems of difficult control of pore structure, difficulty in controlling pore size, low mechanical strength, etc., and achieve high glass transition temperature and thermal stability, The preparation process is simple and diverse, and the effect of excellent mechanical properties

Active Publication Date: 2016-12-28
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In recent years, most scholars have focused on the research of nanoporous polymer materials and organic-inorganic hybrid materials, using the introduction of micro-nano voids to make the dielectric constant of the material meet the current high-performance VLSI dielectric constant requirements, but these materials Most of them fail to meet other performance requirements of ultra-low dielectric constant materials, and there are still many problems: (1) the process is complex, difficult to control, and high production cost; (2) the structure of the pores is not easy to control; (3) it is difficult to Control the size of the pore size, and the pore size distribution is wide; (4) The mechanical properties of the material are not good, and the mechanical strength is low; (5) The material is prone to cracks; (6) It is easy to cause the hole to collapse during the process of removing the template agent; ( 7) The template method adjusts the size of the pores by selecting different surfactants, but the number of optional templates is limited and expensive

Method used

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  • Polyimide with low dielectric properties and its preparation method and application
  • Polyimide with low dielectric properties and its preparation method and application
  • Polyimide with low dielectric properties and its preparation method and application

Examples

Experimental program
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Effect test

Embodiment 1

[0043] Use benzophenone to obtain Tri-Br by Wittig or Wittig-Horner reaction; then obtain TrP-NHi by one-step Suzuki reaction or by multi-step reaction 2 ; Then react with p-fluoronitrobenzene to obtain Tri-TPA-2NO 2 ; Final reduction to obtain Tri-TAP-2NH 2 .

[0044] At room temperature, 5.2967g (0.01mol) (Tri-TPA-2NH 2 ) and 64.9g (68.8ml) N,N-dimethylformamide were added to a 100ml three-necked flask, argon gas was introduced, stirred, and after completely dissolving, 4.4424g (0.01mol) 4,4-hexafluoroiso Propyl phthalic anhydride (6-FDA), continued stirring reaction 12h, obtains the homogeneous viscous polyamic acid solution. Scrape-coat the obtained polyamic acid solution on a clean glass plate, then place the glass plate in a vacuum oven and evacuate it. The heating program is: the room temperature is raised to 100°C and then the temperature is kept constant (the whole process is 1h) → 100°C is heated to 200°C After constant temperature (the whole process 1h) → 200 ℃ ...

Embodiment 2

[0048] At room temperature, 5.2967g (0.01mol) (TPA-TPE-2NH 2 ) and 64.9g (68.8ml) N,N-dimethylformamide were added to a 100ml three-necked flask, argon gas was introduced, stirred, and after completely dissolving, 4.4424g (0.01mol) 4,4-hexafluoroiso Propyl phthalic anhydride (6-FDA), continued stirring reaction 12h, obtains the thick polyamic acid solution of homogeneous phase, and its molecular weight is 32.6 * 10 4 , the molecular weight distribution is 2.08. Scrape-coat the obtained polyamic acid solution on a clean glass plate, then place the glass plate in a vacuum oven and evacuate it. The heating program is: the room temperature is raised to 100°C and then the temperature is kept constant (the whole process is 1h) → 100°C is heated to 200°C After constant temperature (the whole process 1h) → 200 ℃ to 300 ℃, then constant temperature (the whole process 1h), the polyimide film can be taken out after cooling. The dielectric constant of the polyimide film can reach 1.44, ...

Embodiment 3

[0052] Prepare polyamic acid solution in the same way as in Example 1, and then prepare polyimide by chemical imidization. The steps are as follows: add 5 mL of acetic anhydride to the obtained polyamic acid solution, continue stirring, and then slowly add 2.5 mL of three Ethylamine, and heated to 70°C, continued to stir for 6 hours, then scraped the solution onto a clean glass plate, then placed the glass plate in a vacuum oven, evacuated, and dried at 100°C for 12 hours, and the polyimide film could be taken out after cooling. The polyimide film has a dielectric constant of 1.58, a dielectric loss of 0.003, a 5% thermal weight loss temperature of 531°C, a glass transition temperature of 302°C, and a wavelength of 539nm for the strongest fluorescence peak. The pass rate was 87%, and the solubility test result and the infrared spectrogram of the polyimide film were the same as in Example 1.

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Abstract

The invention discloses polyimide with low dielectric properties, and a preparation method and an application thereof. The polyimide provided by the invention is prepared through an imidization method by using the raw materials of aromatic diamine comprising triphenylamine and with large side group comprising triphenylethylene / tetraphenylethylene, and various tetra-dianhydrides. The polyimide provided by the invention has ultra-low dielectric constant, relatively low dielectric loss, excellent solubility, relatively high glass transition temperature, relatively high thermal stability, excellent mechanical performances, excellent photo-luminescent performance, and the like. The synthesis method of the polyimide is simple and diverse, and is suitable for industrial productions. The polyimide provided by the invention can be used for preparing low dielectric materials, and can be widely applied in high-tech industry fields such as electronics, microelectronics, information, luminescent materials, aeronautics and astronautics, and specially very large scale integrated circuits.

Description

technical field [0001] The invention relates to the field of material science, in particular to a class of polyimide with low dielectric properties and its preparation method and application. technical background [0002] High-density, high-speed, multi-functional, high-performance ultra-large-scale integrated circuits (ULSI) require large chip areas and small feature sizes. For this reason, wiring density must be increased, and the width of metal lines and the distance between lines must be reduced. Device density and wiring density have increased greatly, resulting in a rapid increase in resistance and capacitive coupling between lines in the interconnection system. The delay or even distortion of signal transmission, the enhancement of interference noise and the increase of power dissipation have become the bottleneck of the further development of high-performance ultra-large-scale integrated circuits (ULSI). According to the calculation formula model of signal transmiss...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08G73/10C08J5/18C08L79/08
Inventor 张艺刘亦武许家瑞吴欣慧石杰刘四委池振国
Owner SUN YAT SEN UNIV
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