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Preparation method of SiC crystal whisker

A whisker, sol-gel method, applied in the field of preparation of SiC whiskers, can solve the problems of complex process equipment, large energy consumption, long sintering time, etc., and achieve the effects of simple process, short sintering cycle and short production cycle

Active Publication Date: 2015-02-04
ZHENGZHOU UNIVERSITY OF AERONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing SiC whiskers, which solves the problems of long sintering time, large energy consumption, complicated process and required equipment in the existing preparation method

Method used

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  • Preparation method of SiC crystal whisker
  • Preparation method of SiC crystal whisker
  • Preparation method of SiC crystal whisker

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] The preparation method of the SiC whisker of the present embodiment comprises the following steps:

[0051] 1) Take domestic coal with a particle size of less than 50 μm as the carbon source, and tetraethyl orthosilicate as the silicon source, and obtain amorphous SiO by the sol-gel method according to the molar ratio of carbon to silicon of 3:1. 2 Precursors encapsulating coal particles;

[0052]2) Under the pressure of 4MPa, press the precursor obtained in step 1) into a cylindrical piece with a diameter of 28mm and a thickness of 10mm, and embed it in an alumina crucible with quartz sand, and place the crucible in a frequency of 2.45GHz In the multi-mode resonant cavity microwave oven, with the insulation structure, microwave sintering synthesis reaction is carried out in the absence of protective atmosphere:

[0053] First turn on the microwave source, adjust the microwave input power, first raise the temperature to 600°C at a rate of 5°C / min, that is, the dehumidi...

Embodiment 2

[0063] The preparation method of the SiC whisker of the present embodiment comprises the following steps:

[0064] 1) Take ethyl orthosilicate as the silicon source, and use ethyl orthosilicate to make amorphous silica through the sol-gel method; take domestic coal with a particle size of less than 50 μm as the carbon source, and according to the molar ratio of carbon to silicon The ratio of coal and amorphous SiO was 7.5:1 2 Mechanically mix to obtain the precursor;

[0065] 2) Under the pressure of 200MPa, press the precursor obtained in step 1) into a cylindrical piece with a diameter of 30mm and a thickness of 20mm, and embed it in an alumina crucible with quartz sand, and place the crucible in a frequency of 2.45GHz In the multi-mode resonant cavity microwave oven, with the insulation structure, microwave sintering synthesis reaction is carried out in the absence of protective atmosphere:

[0066] First turn on the microwave source, adjust the microwave input power, fir...

Embodiment 3

[0076] The preparation method of the SiC whisker of the present embodiment comprises the following steps:

[0077] 1) Take domestic coal with a particle size of less than 50 μm as the carbon source, and tetraethyl orthosilicate as the silicon source, and obtain amorphous SiO by the sol-gel method according to the molar ratio of carbon to silicon at a ratio of 5:1. 2 Precursors encapsulating coal particles;

[0078] 2) Under the pressure of 100MPa, press the precursor obtained in step 1) into a cylindrical sheet with a diameter of 32mm and a thickness of 25mm, and embed it in an alumina crucible with quartz sand, and place the crucible in a frequency of 2.45GHz In the multi-mode resonant cavity microwave oven, with the insulation structure, microwave sintering synthesis reaction is carried out in the absence of protective atmosphere:

[0079] First turn on the microwave source, adjust the microwave input power, first raise the temperature to 620°C at a rate of 15°C / min, that i...

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Abstract

The invention discloses a preparation method of SiC crystal whiskers. The preparation method includes following steps: (1) preparing a precursor from a carbon source and a silicon source; and (2) pressing the precursor into chips, embedding the chips in quartz sand and performing a sintering synthetic reaction with microwave to obtain the SiC crystal whisker. In the preparation method, quick synthesis of the SiC crystal whisker is achieved in a manner of direct synthesis through the microwave by means of an excellent wave-absorption performance of carbon to obtain the SiC crystal whisker in which crystallization is excellent. In a microwave sintering method, a material is sintered on the basis of dielectric loss of the material itself. Compared with an industrially conventional heating method, the microwave sintering method can achieve volume heating, is less in pollution, is short in sintering period and is low in energy consumption. The SiC crystal whisker is uniform in size, is high in length-diameter ratio, is good in crystallization degree, is less in defect and is high in yield. The method is simple in technology, is convenient to operate, is short in production period, is low in sintering temperature and energy consumption, is less in pollution, is suitable for large-scale industrialized production and has a wide application prospect.

Description

technical field [0001] The invention belongs to the technical field of SiC materials, and in particular relates to a preparation method of SiC whiskers. Background technique [0002] Silicon carbide, also known as corundum or refractory sand, has stable chemical properties, high thermal conductivity, small thermal expansion coefficient, and good wear resistance. It is widely used in functional ceramics, advanced refractory materials, abrasives and metallurgical raw materials; its high-purity single crystal can be used in Manufacture of semiconductors, silicon carbide fibers. Silicon carbide whiskers are short fibers grown from high-purity silicon carbide single crystals, and their mechanical strength is equal to the force between adjacent atoms. The highly oriented structure of silicon carbide whiskers not only makes it have high strength, high modulus and high elongation, but also has electrical, optical, magnetic, dielectric, conductive, and superconductive properties. S...

Claims

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Application Information

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IPC IPC(8): C30B1/10C30B29/36C30B29/62
Inventor 张锐范冰冰邵刚郭晓琴解亚军宋勃震管可可吴昊张亮
Owner ZHENGZHOU UNIVERSITY OF AERONAUTICS
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