Method for protecting epitaxial growth interface in selection region
A technology of selective area epitaxy and interface protection, applied in the direction of crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of high carrier surface density, damage to the growth interface of the selected area, failure to etch the dielectric layer cleanly, etc. , to achieve the effect of improving crystal quality
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[0033]The accompanying drawings are for illustrative purposes only, and should not be construed as limitations on this patent; in order to better illustrate this embodiment, certain components in the accompanying drawings will be omitted, enlarged or reduced, and do not represent the size of the actual product; for those skilled in the art It is understandable that some well-known structures and descriptions thereof may be omitted in the drawings. The positional relationship described in the drawings is for illustrative purposes only, and should not be construed as a limitation on this patent.
[0034] like Image 6 As shown, it is a schematic diagram of the structure of the AlGaN / GaN selective area epitaxial material prepared in this embodiment, which involves a selective area epitaxial growth interface protection method, and its detailed process steps include the following:
[0035] 1. If Figure 7 As shown, a substrate 1 requiring epitaxial growth is provided; in this emb...
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