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Preparation method of high heat-conducting diamond/copper-based composite material

A technology of copper-based composite materials and diamond, which is applied in the direction of metal material coating process, superimposed layer plating, coating, etc., can solve the problem that the diamond coating cannot successfully adapt to the development of electronic packaging materials, etc., and achieve improved interface conditions , Improve the binding state, the effect of good interface binding state

Inactive Publication Date: 2014-08-13
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, diamond coatings have not been successfully adapted to the development of electronic packaging materials

Method used

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  • Preparation method of high heat-conducting diamond/copper-based composite material
  • Preparation method of high heat-conducting diamond/copper-based composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1. Use magnetron sputtering method to coat 0.5 μm molybdenum coating on the surface of diamond powder with a particle size of 100 μm to form molybdenum-coated diamond powder;

[0023] Two, adopt the method for electroless plating to plate the copper coating of 5 μm on the surface of the composite powder prepared in step 1 to form copper-plated molybdenum-plated diamond powder;

[0024] 3. The copper-plated molybdenum-plated diamond powder in step 2 is mixed with 10 μm copper powder, wherein the diamond volume fraction is 50%, forming a mixed powder;

[0025] 4. The mixed powder in step 3 is cold-pressed, and then the cold-pressed green body is put into a vacuum hot-press furnace for hot-press sintering. The sintering process is as follows: the degree of vacuum is 0.001-0.1Pa, the sintering temperature is 950°C, and the pressure is applied to 100MPa at the same time, and the heat preservation and pressure holding time is 2h, that is, the diamond / copper matrix composite m...

Embodiment 2

[0027] 1. Plating 0.1 μm molybdenum coating on the surface of diamond powder with a particle size of 100 μm by magnetron sputtering to form molybdenum-coated diamond powder;

[0028] Two, adopt the method for electroless plating to plate the copper coating of 4 μm on the surface of the composite powder prepared in step 1 to form copper-plated molybdenum-plated diamond powder;

[0029] 3. The copper-plated molybdenum-plated diamond powder in step 2 is mixed with 10 μm copper powder, wherein the diamond volume fraction is 40%, forming a mixed powder;

[0030] 4. The mixed powder in step 3 is cold-pressed, and then the cold-pressed green body is put into a vacuum hot-press furnace for hot-press sintering. The sintering process is as follows: the degree of vacuum is 0.001-0.1Pa, the sintering temperature is 950°C, and the pressure is applied to 100MPa at the same time, and the heat preservation and pressure holding time is 2h, that is, the diamond / copper matrix composite material ...

Embodiment 3

[0032] 1. Use magnetron sputtering method to coat 0.5 μm molybdenum coating on the surface of diamond powder with a particle size of 100 μm to form molybdenum-coated diamond powder;

[0033] Two, adopt the method for electroless plating to plate the copper coating of 4 μm on the surface of the composite powder prepared in step 1 to form copper-plated molybdenum-plated diamond powder;

[0034] 3. The copper-plated molybdenum-plated diamond powder in step 2 is mixed with 10 μm copper powder, wherein the diamond volume fraction is 30%, forming a mixed powder;

[0035] 4. The mixed powder in step 3 is cold-pressed, and then the cold-pressed green body is put into a vacuum hot-press furnace for hot-press sintering. The sintering process is as follows: the degree of vacuum is 0.001-0.1Pa, the sintering temperature is 950°C, and the pressure is applied to 100MPa at the same time, and the heat preservation and pressure holding time is 2h, that is, the diamond / copper matrix composite m...

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Abstract

The invention relates to a preparation method of a high heat-conducting diamond / copper-based composite material which consists of matrix copper, diamond powder and a molybdenum coating, wherein the volume fraction of molybdenum is 1-2%, the balance of diamond particles and copper. In diamond and copper, the volume fraction of the diamond powder is 15-50%. The preparation method provided by the invention can solve the problem that in methods of infiltration, powder metallurgy and the like, diamond powder and copper are non-wetting to lead to sintering densification. The preparation method comprises the following steps: I, plating molybdenum on the surfaces of the diamond particles by adopting a magnetron sputtering method to prepare molybdenum-coated diamond powder; II, plating copper on the surface of the molybdenum-coated diamond powder by a chemical plating method to prepare copper and molybdenum-coated diamond powder; III, mixing the composite powder obtained in step II and pure copper powder in a certain proportion by a mechanical mixing manner; and IV, hot pressing and sintering the mixed powder prepared in step III in vacuum to obtain the diamond / copper-based composite material. The material has a good interface bonding condition, high density and heat conductivity.

Description

technical field [0001] The invention belongs to the research field of diamond metal matrix composite materials, and relates to a preparation method of diamond / copper matrix composite materials. Background technique [0002] With the development of electronic packaging towards high performance, low cost, miniaturization and integration, highly integrated microelectronic devices are developing rapidly, and the operating temperature of original devices is also increasing. According to Moore's law, the thermal density of microelectronic components increases with the increase of its integration level. In the near future, its thermal density can be comparable to that of an atomic reaction, reaching 200W / cm 3 . Traditional microelectronic equipment packaging materials include pure Cu and its alloys, pure Al and its alloys, Si, Mo, glass fiber, organic matter, aluminum nitride, etc. These materials have certain limitations in their thermal conductivity and thermal diffusivity. How...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/05C22C9/00C22C26/00C23C28/02
Inventor 罗国强刘茹霞沈强张联盟王传彬李美娟
Owner WUHAN UNIV OF TECH
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