Preparation method for ordered silicon quantum dots in three-dimensional space

Abstract

A preparation method for ordered silicon quantum dots in three-dimensional space comprises the following steps of (1) preparing liquor; (2) preparing a patterning monocrystalline silicon substrate; (3) depositing a silicon nitride film; (4) depositing a microcrystalline silicon film; (5) depositing a nonstoichiometric silicon carbide film; (6) preparing a periodic multilayered film; (7) depositing a silicon nitride film on the prepared periodic multilayered film according to the step (3) so as to obtain a multilayered film sample; (8) performing high-temperature annealing treatment on the prepared multilayered film sample to obtain an annealed multilayered film sample; and (9) performing ammonia gas plasma passivation treatment to obtain the ordered silicon quantum dots in the three-dimensional space. By using the preparation method for ordered silicon quantum dots in the three-dimensional space, a multilayered film self-assembling technology and a patterning monocrystalline silicon substrate technology are fused integrally; and the prepared silicon quantum dots have the characteristics that the preparation area is large, the ordered silicon quantum dots have small defects and are distributed and arrayed in the three-dimensional space orderly, and the nucleation sites and the nucleation sizes are controllable.

Description

technical field [0001] The invention relates to the technical field of manufacturing silicon-based semiconductor devices, in particular to a preparation method of three-dimensional spatially distributed ordered silicon quantum dots. Background technique [0002] Due to the quantum confinement effect, silicon quantum dots have potential applications in various high-performance microelectronics and optoelectronic devices. At present, the preparation technology of silicon quantum dots has become a research hotspot and frontier topic in the world. Studies have found that the excellent physical properties of silicon quantum dots depend to a large extent on the orderliness of their spatial distribution. The more orderly the silicon quantum dots are arranged, the better the corresponding optoelectronic device performance will be. At present, the main challenge for the commercial application of silicon quantum dots is how to prepare silicon quantum dot arrays with large area, few d...

AI Technical Summary

Problems solved by technology

Due to the simple method of preparing silicon quantum dots in the S-K growth mode and few defects, it is a widely used preparation technology for silicon quantum dots. However, the random distribution of silicon quantum dots is still the main challenge for preparing silicon quantum dots in this way.

In addition, although the order of the arrangement and distribution of quantum dots can be controlled as much as possible in the vertical direction by optimizing the film thickness of each layer with a multilayer film structure, the effect is poor in the horizontal direction.

The latter methods are to prepare a patterned substrate (patterned single crystal silicon substrate technology generally mainly uses photolithography technology or ion etching technology to first engrave regular patterns on the silicon substrate through a mask. , and then use physical or chemical methods to prepare silicon quantum dots) can accurately control the nucleation position and distribution arrangement of quantum dots in the horizontal direction. These methods are considered to be the most direct and effective methods for obtaining spatially distributed and ordered silicon quantum dots in the future. However, silicon quantum dots prepared by these methods generally have disadvantages such as large size, small area, and many defects due to the constraints of photolithographic dimensional accuracy, chemical corrosion reagent pollution, and other inherent properties.