Method for preparing Ge photoelectric detector with transverse p-i-n structure

Abstract

The invention discloses a method for preparing a Ge photoelectric detector with a transverse p-i-n structure, and relates to the germanium photoelectric detector. The method comprises the steps of (1) carrying out epitaxial growth of a monocrystalline germanium layer on a substrate, growing a SiO2 covering layer on the monocrystalline germanium layer, (2) using a micro-electronics photolithography to etch an active area platform surface of a long and thin strip shape on the epitaxial monocrystalline germanium layer, (3) using the SiO2 covering layer on the monocrystalline germanium layer for masking, forming a doped p area and a doped n area on the two sides of the platform surface respectively through sidewise large-declination ion implantation, (4) carrying out thermal annealing after deposition of a metal Ni layer, forming NiGe contact electrodes and NiSi contact electrodes on the two sides of the platform surface and the bottom of the etched area through a self-alignment technology used in the forming process of NiGe and NiSi, and (5) leading out the device electrodes, and protecting a passivating layer. Therefore, the Ge photoelectric detector with the transverse p-i-n structure is obtained. The technology is simple, operability is high, and high application value is achieved.

Description

Technical field [0001] The invention relates to a germanium photodetector, in particular to a method for preparing a Ge photodetector with a lateral p-i-n structure. Background technique [0002] Studies have shown that more than half of the power consumption in integrated circuit chips is concentrated in the interconnection of the chips, and the interconnection is also limited by the signal transmission bandwidth. In the long run, the introduction of optical interconnects in the chip instead of electrical interconnects, and the use of photons as a carrier to achieve high-speed and low-power signal transmission is an inevitable requirement for further integration of the chip. In silicon-based optical interconnection, photodetectors that convert optical signals into electrical signals are important devices for on-chip optical interconnection. The method of making photodetectors is to directly epitaxial germanium (Ge) material on silicon as the active area to prepare long-waveleng...

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Problems solved by technology

However, the Ge intrinsic region is also the absorption region of the vertically incident light signal, and the light absorption and the photogenerated carrier transition proceed in the same direction. The thinning of the intrinsic region will inevitably lead to insufficient light absorption at the same time, thus reducing the optical signal response of the device. Spend

The contradiction between high speed and high responsivity is an inherent defect of vertical incidence vertical p-i-n structure Ge photodetectors

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