Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A radiation-resistant strengthening method for bipolar devices based on the passivation method of the second passivation layer

A radiation-resistant reinforcement and bipolar device technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low radiation resistance of bipolar devices, improve radiation resistance, reduce Composite leakage current, the effect of reducing the degree of damage to the current gain

Active Publication Date: 2017-02-01
HARBIN INST OF TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the problem that in the passivation layer of the bipolar device, due to the influence of the positive charge captured by the oxide and the interface state, the radiation resistance of the bipolar device is low, a passivation method based on the second passivation layer is proposed. Anti-irradiation strengthening method for bipolar devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A radiation-resistant strengthening method for bipolar devices based on the passivation method of the second passivation layer
  • A radiation-resistant strengthening method for bipolar devices based on the passivation method of the second passivation layer

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0016] Specific implementation mode one, combination figure 1 To illustrate this specific embodiment, the method for resisting radiation strengthening of a bipolar device based on the second passivation layer passivation method described in this specific embodiment includes the following steps:

[0017] Step 1: Prepare a bipolar transistor using a traditional process, and form a first passivation layer on the bipolar transistor;

[0018] Step 2: After the first passivation layer is formed, a second passivation layer is grown on the first passivation layer by using a low-pressure chemical vapor deposition method;

[0019] Step 3: Perform ion implantation on the second passivation layer;

[0020] Step 4: Perform an annealing process on the integrated structure formed by the bipolar transistor, the first passivation layer and the second passivation layer.

[0021] In this embodiment, on the basis of the existing bipolar device and circuit, the passivation method of the second passivation l...

specific Embodiment approach 2

[0022] Specific embodiment two, the difference between this specific embodiment and the method for anti-irradiation strengthening of a bipolar device based on the second passivation layer passivation mode described in specific embodiment one is that the second passivation layer is doped Heterosilicate glass layer or doped d-tetraethyl orthosilicate layer.

specific Embodiment approach 3

[0023] Embodiment 3 The difference between this embodiment and the method for anti-irradiation strengthening of a bipolar device based on the second passivation layer passivation method described in Embodiment 1 is that the second passivation layer is When ion implantation is performed, the implanted ions are fluoride, chloride, bromide, iodide, or arsenic.

[0024] In this embodiment, by implanting fluoride, chloride, bromide, iodide, or arsenic ions into the second passivation layer, the ionizing radiation defects inside the second passivation layer can be kept stable, and will not be caused by radiation fluence. The increase of, the passivation effect has obvious changes, thereby improving the anti-radiation ability of the bipolar device.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for reinforcing the radiation resistance of a bipolar device based on a second passivation layer passivation mode and relates to the technical field of radiation resistance of the bipolar device. The problem that in the passivation layer of the bipolar device, due to the fact that positive charges and interface states are captured by oxide, the radiation resistant capacity of the bipolar device is low is solved. The method for reinforcing the radiation resistance comprises the following steps that firstly, a bipolar transistor is prepared through a traditional technology and a first passivation layer is formed on the bipolar transistor; secondly, after the first passivation layer is formed, a second passivation layer is developed on the first passivation layer through a low-pressure chemical gas phase deposition method; thirdly, ion injection is conducted on the second passivation layer; fourthly, the annealing process is conducted on an integrated structure formed by the bipolar transistor, the first passivation layer and the second passivation layer. The method is suitable for improving the radiation resistant capacity of the bipolar device.

Description

Technical field [0001] The invention relates to the technical field of anti-radiation bipolar devices. Background technique [0002] The electrons and protons in the space radiation environment have a strong influence on the performance of electronic devices used in spacecraft, which can cause ionizing radiation effects, displacement radiation effects and single event effects, etc., leading to anomalies or failures of electronic devices, and even finally causing disasters in spacecraft Sexual accidents. Therefore, improving the radiation resistance of bipolar devices has very important engineering practical significance for optimizing the selection and design of spacecraft and improving the reliability of spacecraft in orbit. [0003] Passivation is a necessary condition to improve the reliability of the device, and it is also a content that needs to be focused on in the silicon process. In the integrated circuit based on bipolar technology, the importance of passivation is even ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331H01L21/265
CPCH01L21/3105H01L29/66272
Inventor 李兴冀刘超铭杨剑群肖景东何世禹
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com