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A method for strengthening anti-ionizing radiation of bipolar devices based on ion implantation of passivation layer

A bipolar device and ion implantation technology, applied in the field of electronics, can solve the problem of weakening of the device's surface anti-radiation ability, achieve the effect of enhancing the anti-ionizing radiation performance, improving the anti-radiation ability, and wide application prospects

Active Publication Date: 2016-08-17
HARBIN INST OF TECH
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Problems solved by technology

[0008] Aiming at the problem that the oxide on the surface of the current bipolar device traps positive charges and the interface state weakens the anti-radiation ability of the device surface, a bipolar device anti-ionizing radiation based on ion implantation of passivation layer is provided Reinforcement method

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  • A method for strengthening anti-ionizing radiation of bipolar devices based on ion implantation of passivation layer
  • A method for strengthening anti-ionizing radiation of bipolar devices based on ion implantation of passivation layer
  • A method for strengthening anti-ionizing radiation of bipolar devices based on ion implantation of passivation layer

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specific Embodiment approach 1

[0042] Specific implementation mode one: the following combination figure 1 Describe this embodiment mode, a bipolar device anti-ionizing radiation strengthening method based on the passivation layer ion implantation method described in this embodiment mode, the ionizing radiation resistance strengthening method of the bipolar device is:

[0043] Step 1. According to the material type, density and thickness of the passivation layer of the bipolar device, use SRIM software to calculate the energy of F, Cl, Br, I and As ions to be implanted for the passivation layer of the bipolar device and range information;

[0044] Step 2. According to the energy and range information of F, Cl, Br, I and As ions obtained in step 1, TCAD software is used to simulate the current gain variation of the bipolar device and the internal defect information of the passivation layer of the bipolar device;

[0045] Step 3. Determine the optimal incident F, Cl, Br, I and As ion energies of the bipolar ...

specific Embodiment approach 2

[0051] Specific implementation mode two: the following combination figure 1 Describe this embodiment mode. This embodiment mode will further explain Embodiment 1. After step 5, anneal the bipolar device after step 5 anti-ionizing radiation reinforcement. The temperature is 400-1100 ° C, and the annealing time is 0.5-60 minutes annealing process.

specific Embodiment approach 3

[0052] Specific implementation mode three: the following combination figure 1 Describe this embodiment, this embodiment will further explain Embodiment 1, the optimal incident F, Cl, Br, I and As ion energy and fluence described in step 3 described in this embodiment refer to, according to the control double The principle that the performance change of polar devices after ion implantation is less than 10% of the original parameters is used to determine the optimal incident F, Cl, Br, I and As ion energies and fluences of bipolar devices.

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Abstract

The invention provides a method for reinforcing ionization radiation resistance of a bipolar device based on a passivation layer ion injection mode and belongs to the electronic technical field. The problem that due to the fact that oxide on the surface of an existing bipolar device captures positive charges and interface states, the radiation resistant capacity of the bipolar device is weakened is solved. The method for reinforcing the ionization radiation resistance of the bipolar device based on the passivation layer ion injection mode comprises the steps that firstly, SRIM software and TCAD software are used for conducting analog simulation on F ions, Cl ions, Br ions, I ions and As ions; secondly the energy, the range and the injection volume of the ions are obtained through simulation; thirdly, the ions are injected. According to the injection ions, F elements, Cl elements, Br elements, I elements and As elements are selected to form a capture trap of ionizing radiation shortages so that the density of the ionizing radiation shortages can be reduced. According to the passivation layer ion injection mode, the influence on the performance of the device due to the fact that the oxide captures the positive charges and the interface states is reduced, the radiation resistant capacity of the bipolar device is improved, and the method is used for reinforcing the radiation resistance of an electronic device for a spacecraft.

Description

technical field [0001] The invention relates to an anti-ionization radiation strengthening method for an ionization-radiation-resistant bipolar device, which belongs to the field of electronic technology. Background technique [0002] Electrons and protons in the space radiation environment have a strong impact on the performance of electronic devices used in spacecraft, which will cause ionizing radiation effects, displacement radiation effects and single event effects, etc., resulting in abnormalities or failures of electronic devices, and eventually lead to spacecraft accidents. catastrophic accident. [0003] Therefore, improving the anti-irradiation ability of bipolar devices has very important engineering practical significance for optimizing the material selection and design of spacecraft and improving the reliability of spacecraft in orbit. [0004] Passivation is a necessary condition for improving the reliability of devices, and it is also a key concern in silicon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265H01L21/331
CPCH01L21/265H01L29/66234
Inventor 李兴冀刘超铭杨剑群肖景东何世禹
Owner HARBIN INST OF TECH
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