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Bipolar device irradiation resisting reinforcing method based on reduction of hydrogen content

A technology for anti-radiation hardening and bipolar devices, applied in the field of electronics, can solve the problems of high hydrogen content of bipolar devices, low radiation resistance of bipolar devices, etc., and achieves simple manufacturing process steps and enhanced resistance to total dose irradiation. performance, the effect of reducing performance degradation

Inactive Publication Date: 2017-02-08
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of high hydrogen content inside the bipolar device and low radiation resistance of the bipolar device, thereby providing a method for strengthening the anti-radiation of the bipolar device based on reducing the content of hydrogen

Method used

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  • Bipolar device irradiation resisting reinforcing method based on reduction of hydrogen content
  • Bipolar device irradiation resisting reinforcing method based on reduction of hydrogen content

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specific Embodiment approach 1

[0018] Specific implementation mode one: combine figure 1 with figure 2 This implementation mode is described in detail. The radiation resistance strengthening method of a bipolar device based on reducing the content of hydrogen element described in this implementation mode includes a step for reducing the hydrogen content inside the bipolar device.

[0019] Bipolar devices include NPN devices, PNP devices, digital bipolar circuits, analog bipolar circuits, and digital / analog circuits. The hydrogen content inside the bipolar device is reduced without affecting the electrical performance parameters of the device. That is to say, regardless of the discrete device or circuit, the internal hydrogen content must be reduced regardless of the polarity (NPN type or PNP type) of the bipolar device.

[0020] figure 1 The relation of the reciprocal change of current gain △(1 / β) of bipolar transistors with different hydrogen contents after irradiation with low-energy electrons is show...

specific Embodiment approach 2

[0023] Specific embodiment 2: This embodiment is a further description of a bipolar device anti-radiation strengthening method based on reducing the hydrogen element content described in specific embodiment 1. In this embodiment, before the passivation process step is as follows method to proceed:

[0024] Flushing step: the soaking step is omitted, and the direct flushing method is adopted, and compared with the flushing step of the traditional bipolar device process, the amount of flushing water is reduced by 40%-60%.

[0025] Compared with the flushing step of the bipolar device process in the prior art, the amount of flushing water is reduced by 40%-60% in each step that requires flushing, and the water is directly flushed without soaking, which can reduce the internal pressure of the bipolar device. hydrogen content. The method described in this embodiment is simple and easy to operate.

specific Embodiment approach 3

[0026] Specific embodiment three: This embodiment is a further description of a bipolar device anti-radiation strengthening method based on reducing the hydrogen content described in specific embodiment two. In this embodiment, the following process steps are also carried out: Process steps for preparing alloy electrodes under vacuum atmosphere.

[0027] The traditional process for preparing bipolar devices is to prepare alloy electrodes in an inert gas atmosphere. In this embodiment, the alloy electrodes are prepared in a vacuum atmosphere to reduce the hydrogen content inside the bipolar devices. The hydrogen content inside the bipolar device is reduced by changing the alloy atmosphere, and the method is simple and easy to operate.

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Abstract

The invention discloses to a bipolar device irradiation resisting reinforcing method based on the reduction of hydrogen content, relating to the technical field of electronics. The invention concretely relates to an irradiation resisting bipolar device. The method comprises a step of reducing the hydrogen content in the bipolar device. Based on an existing bipolar device preparation process, through controlling the hydrogen content in the bipolar device, in the condition of a same radiation dose, the composite leakage current of the bipolar device can be greatly reduced, the current gain damage degree of the bipolar device is reduced, and the purpose of improving the bipolar device irradiation resisting ability is achieved. The method is suitable for irradiation resisting reinforcing bipolar device.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a radiation-resistant bipolar device. Background technique [0002] Bipolar transistors have good current driving capability, linearity, low noise and excellent matching characteristics, and are the basic units of bipolar integrated circuits. They play an important role in analog or hybrid integrated circuits. These bipolar transistors and circuits are widely used in spacecraft. Under the action of charged particles (protons and electrons) in space, damage to electronic devices will directly affect the reliability and life of the spacecraft. A large number of aerospace practices have shown that many aerospace accidents or failures are related to radiation damage to electronic devices. Accidents or failures caused by radiation damage to electronic devices account for more than 40% of all types of spacecraft accidents or failures, resulting in huge economic losses. . Bipola...

Claims

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Application Information

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IPC IPC(8): H01L21/328H01L21/263H01L21/30
CPCH01L21/263H01L21/30H01L29/66227
Inventor 刘超铭李兴冀杨剑群马国亮
Owner HARBIN INST OF TECH
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