A kind of preparation method of anti-radiation reinforced bipolar transistor
A bipolar transistor, anti-radiation reinforcement technology, applied in the field of electronics, can solve the problem of low anti-irradiation ability of bipolar transistors, and achieve improved anti-irradiation ability, simple manufacturing process steps, and anti-irradiation ability. The effect of increasing the failure threshold
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specific Embodiment approach 1
[0028] Specific implementation mode one: refer to figure 1 This implementation mode is described in detail. In the radiation-resistant reinforced bipolar transistor described in this implementation mode, the emitter region of the transistor takes the diagonal line of the base region as the symmetrical line to form a left-right symmetrical square symmetrical comb structure. N pairs of rectangular tooth structures are symmetrically extended outward on both sides of the line, the angle between each pair of rectangular tooth structures is 90 degrees, and n is a positive integer greater than 3.
[0029] A schematic diagram of a simplified structure of a conventional bipolar transistor, such as figure 2 As shown; usually, the emitter region of the bipolar transistor adopts a rectangular comb structure, such as image 3 shown. Figure 4 After irradiation with low-energy electrons, the variation of the reciprocal current gain of bipolar transistors with different emitter perimeter / ...
specific Embodiment approach 2
[0034] Embodiment 2: This embodiment is a further description of the radiation-resistant hardened bipolar transistor described in Embodiment 1. In this embodiment, the value range of n is greater than 3 and less than 10.
specific Embodiment approach 3
[0035] Embodiment 3: This embodiment is a further description of the radiation-resistant hardened bipolar transistor described in Embodiment 1. In this embodiment, all rectangular tooth structures have the same width.
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