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Absorbing layer structure for non-refrigeration long-wave infrared detector

A technology of long-wave infrared and absorbing layers, which is applied in the direction of instruments, measuring devices, scientific instruments, etc., can solve the problems of process incompatibility, difficulty in using line array and area array detectors, short absorption band, etc., and achieve firm adhesion and low specific heat capacity , Strong corrosion resistance

Active Publication Date: 2014-06-11
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The design of this patent effectively solves the problems that the traditional infrared absorbing layer structure has a short absorption band, is incompatible with existing semiconductor processes, and is difficult to be used in line array and area array detectors.

Method used

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  • Absorbing layer structure for non-refrigeration long-wave infrared detector

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example 1

[0022] Based on Mn 1.56 co 0.96 Ni 0.48 o 4 In the heat-sensitive thin-film infrared detector, the long-wave infrared absorbing layer structure provided by this patent is adopted. Specifically, it is realized through the following steps.

[0023] (1) Mn 1.56 co 0.96 Ni 0.48 o 4 Preparation of thermosensitive film

[0024] 1) Preparation of Mn on amorphous alumina substrate by chemical solution method 1.56 co 0.96 Ni 0.48 o 4 Thin film with a thickness of about 3.5 μm.

[0025] (2) Etching to form electrode structure

[0026] 2) in Mn 1.56 co 0.96 Ni 0.48 o 4 The surface of the thin film is photolithographically patterned to form an etching mask.

[0027] 3) The photosensitive element of the detector is made by argon ion / HBr wet etching process, with an area of ​​0.09mm 2 . Float cleaning.

[0028] 4) Photolithographic patterning is carried out on the surface of the film, and 50nm of chromium and 200nm of gold are deposited as electrodes of the detector by ...

example 2

[0034] Based on Mn 1.56 co 0.96 Ni 0.48 o 4 In the heat-sensitive thin-film infrared detector, the long-wave infrared absorbing layer structure provided by this patent is adopted. Specifically, it is realized through the following steps.

[0035] (1) Mn 1.56 co 0.96 Ni 0.48 o 4 Preparation of thermosensitive film

[0036] 1) Preparation of Mn on amorphous alumina substrate by chemical solution method 1.56 co 0.96 Ni 0.48 o 4 Thin film with a thickness of about 3.5 μm.

[0037] (2) Etching to form electrode structure

[0038] 2) in Mn 1.56 co 0.96 Ni 0.48 o 4 The surface of the thin film is photolithographically patterned to form an etching mask.

[0039] 3) The photosensitive element of the detector is made by argon ion / HBr wet etching process, with an area of ​​0.09mm 2 . Float cleaning.

[0040] 4) Photolithographic patterning is carried out on the surface of the film, and 50nm of chromium and 200nm of gold are deposited as electrodes of the detector by ...

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Abstract

The invention discloses an absorbing layer structure for a non-refrigeration long-wave infrared detector. The absorbing layer is arranged on a heat reactive film of the detector and sequentially composed of a first medium layer, a second metal layer and a third insulating layer from top to bottom. The absorbing layer is characterized in that the first medium layer is a silicon nitride film which is good in thermal-conductivity and high in corrosion resistance, the silicon nitride film is used as an anti-reflecting layer and a component protecting layer, the thickness of the film is 1000-1200nm, the second metal layer is a nickel chrome layer with the thickness being 8-12nm, the second metal layer is used as an absorbing layer of an infrared band, the third insulating layer is a silicon dioxide film with the thickness being 50-100nm, and the silicon dioxide film is used as the insulating layer between the heat reactive film and the metal layer. The absorbing layer is simple in preparation process, compatible with the existing microelectronic process and suitable for unit, alignment and area array infrared detectors. The infrared absorbing layer has the advantages of being firm in adherence, high in resistance to corrosion, good in repeatability, low in specific heat capacity and excellent in heat transfer performance, and has the absorption rate of larger than 85% on the infrared band of 8-14 micrometers.

Description

technical field [0001] The invention relates to an optical film element, in particular to an absorbing layer structure for an uncooled long-wave infrared detector. Background technique [0002] The uncooled heat-sensitive thin-film infrared detector is an important infrared detector. Compared with bulk material heat-sensitive devices, it has the advantages of small heat capacity, fast response speed, high reliability and stability, and good repeatability. It is used in military, Civil and industrial fields have broad application prospects, such as product production monitoring, infrared thermal imaging, fire alarm, non-contact temperature measurement, spectral analysis, temperature sensor, missile tracking and interception, medical diagnosis and many other aspects. Thermal infrared detectors use the thermal effect of infrared radiation to detect infrared radiation through the transformation of heat and other physical quantities (such as resistance value, spontaneous polariza...

Claims

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Application Information

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IPC IPC(8): G01J5/02G01J5/08
CPCG01J5/046G01J5/0853
Inventor 欧阳程黄志明周炜吴敬高艳卿龙芳褚君浩
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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