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A three-dimensional cross-scale carbon electrode array structure and its preparation method

An array structure, cross-scale technology, applied in the field of three-dimensional cross-scale carbon electrode array structure and its preparation, can solve the problems of long preparation time, and achieve the effect of simple preparation method, good repeatability and large specific surface area

Inactive Publication Date: 2016-04-13
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method requires multiple directional exposures, and requires high temperature activation after pyrolysis to form a carbon structure, resulting in a longer preparation time.

Method used

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  • A three-dimensional cross-scale carbon electrode array structure and its preparation method
  • A three-dimensional cross-scale carbon electrode array structure and its preparation method
  • A three-dimensional cross-scale carbon electrode array structure and its preparation method

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preparation example Construction

[0028] The preparation method of the three-dimensional cross-scale carbon electrode array structure of the present invention comprises the following steps:

[0029] (1) Pretreatment: Clean the silicon wafer to remove surface impurities and oxide layers.

[0030] (2) Coating a negative photoresist on the pretreated silicon wafer and performing pre-baking. The reason for choosing the negative resist as the precursor is that the negative resist can become a carbon structure when pyrolyzed in an inert gas, while the positive resist will volatilize when pyrolyzed at high temperature.

[0031] (3) Using a polydimethylsiloxane (polydimethylsiloxane, PDMS) template as an imprint template to perform an imprint process to obtain a photoresist hemispherical array structure.

[0032] Specifically, the imprinting temperature is 95° C., the pressure is 10 MPa, and the exposure time is 60 s.

[0033] (4) Etching with oxygen plasma to obtain a cross-scale photoresist array structure.

[00...

Embodiment 1

[0048] The preparation method of the three-dimensional cross-scale carbon electrode array structure of the embodiment of the present invention includes the following steps:

[0049] (1) Pretreatment: Clean the silicon wafer to remove surface impurities and oxide layers. Specifically, first place the silicon wafer in acetone for 10 minutes and then rinse it with deionized water; then put the silicon wafer into an SPM solution (a mixture of concentrated sulfuric acid and hydrogen peroxide at a volume ratio of 2:1) and heat it to 150°C After keeping for 10 minutes, rinse it with a large amount of deionized water; finally place the silicon wafer on a hot plate (Stuart, SD160) at 130°C for 30 minutes, then remove it and cool it to room temperature.

[0050] (2) Coat the pretreated silicon wafers (SU-8GM1070, KW-4A colloid machine). Specifically, first rotate at 500rpm for 10s, then at 1000rpm for 30s; then pre-bake on a hot plate, first keep at 65°C for 15min, then at 95°C for 30m...

Embodiment 2

[0073] The oxygen plasma treatment time of step (4) in Example 1 was changed to 5 minutes, and other steps were the same as in Example 1. The cross-scale SU-8 array structure is obtained as Figure 4 (a) and Figure 4 (b) shown. Due to shortening the treatment time of oxygen plasma, the removed part of the obtained micro-nano structure is reduced, and a lot of photoresist in the center of the hemisphere has not been removed, and the formed structure has micro-nano structure on the surface, while the inner part The structure is again a solid photoresist structure.

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Abstract

The invention discloses a three dimensional trans-scale charcoal electrode array structure and a manufacture method, the method comprises the following steps: cleaning silicon chip, removing surface impurity and an oxide layer; 2) coating negative photoresist on the silicon chip and then pre-roasting; 3) using a PDMS template as an impression template for performing an impression technology to obtain a photoresist hemisphere array structure; 4) using oxygen plasma for etching to obtain the trans-scale photoresist array structure; and 5) pyrolyzing the trans-scale photoresist array structure to obtain the three dimensional trans-scale charcoal electrode array structure. The method has the advantages of simple process, convenient control and good repeatability, the prepared charcoal electrode array structure has the advantages of stable structure, large specific surface area and good biocompatibility, and can be used in the micro-electro-mechanical system fields of minisize super capacitance, minute type cell, biochip, minisize sensor and the like.

Description

technical field [0001] The invention belongs to the technical field of carbon micro / nano electromechanical systems, and more specifically relates to a three-dimensional cross-scale carbon electrode array structure and a preparation method thereof. Background technique [0002] Carbon materials have the advantages of good biocompatibility, high conductivity, and good stability. Carbon materials are expected to be used in micro-electromechanical systems (MEMS) fields such as micro-supercapacitors, micro-batteries, biochips, and micro-sensors. Carbon microelectromechanical systems (C-MEMS) technology, which innovatively combines pyrolysis technology with micro-nano processing techniques (such as photolithography), has broad application prospects in various fields of MEMS. The process is simple to operate and can be mass-produced. By using negative photoresist (such as SU-8 glue) as a precursor, a three-dimensional crosslinked microstructure is obtained through a photolithograph...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/04
Inventor 汤自荣蒋淑兰史铁林夏奇高阳龙胡习爽
Owner HUAZHONG UNIV OF SCI & TECH
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