A production process and equipment for a large-scale solar thin-film cell module

Abstract

The invention discloses a large solar thin film battery piece assembly production process and equipment. The process includes the steps of thin film layer manufacturing, line marking, junction, piece compositing, solidification through an autoclave and the like. Under high vacuum or ultrahigh vacuum environment, copper indium gallium selenide (CIGS) is manufactured through electron beam evaporation, an ion source and a correction plate device so as to manufacture a solar thin film battery piece assembly. According to the method, the non-reactive ion source is used, inert gas is added into the vacuum environment to serve as working gas, and the electron beam evaporation mode of vacuum deposition is used for manufacturing a large-area battery piece. A multi-position crucible is used for carrying out time-sharing one-time vacuum evaporation of cadmium sulfide (CdS) or zinc sulfide (ZnS) on a buffering layer and intrinsic zinc oxide (i-ZnO) of a window layer and aluminum-doped zinc oxide (AZO) on a battery substrate to manufacture a copper indium gallium selenide (CIGS) thin film solar battery.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a production process and equipment for a large-scale solar thin film cell assembly. Background technique [0002] Traditional solar cells are divided into crystalline silicon cells and thin film cells, of which crystalline silicon cells are divided into monocrystalline silicon and polycrystalline silicon cells. The photoelectric conversion efficiency of monocrystalline silicon photovoltaic modules is 15-18%, and the photoelectric conversion efficiency of polycrystalline silicon photovoltaic modules is 14%. -17%. Thin-film batteries are divided into amorphous silicon thin-film batteries, CdTe batteries (cadmium telluride thin-film solar cells) and CIGS batteries (copper indium gallium selenide thin-film solar cells). Among the above three thin-film solar cells, CIGS cells have the highest conversion efficiency among thin-film cells. Adding a small amount of gallium can increa...

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Problems solved by technology

[0014] 2. Preparation method of traditional CIGS battery

However, different materials have different vapor pressures, a limitation that makes it difficult to control with arbitrary precision the final composition of the deposited alloy

[0017] 2. Selenization method: This method is to deposit a prefabricated layer of copper indium gallium (Cu-In-Ga) alloy on the deposited molybdenum (Mo) back electrode film, and then pass in hydrogen selenide (H 2 Se) to post-process the copper indium gallium (Cu-In-Ga) alloy prefabricated layer; the selenization method commonly used in the industry has a very complicated process, high selenization temperature (above 550°C), high energy consumption, and low production safety , the excess hydrogen selenide (H 2 Se) gas is difficult to handle, high investment cost, high production cost

In addition to the defect of energy consumption in this process, the surface of soda-lime glass in China is generally in a slightly molten state above 450°C, and the glass substrate will be deformed above 550°C, which is not conducive to the growth of the film. Therefore, the coated film The annealing treatment of the substrate of the layer is extremely unfavorable for industrial production

[0019] 3. Disadvantages of copper indium gallium selenide thin-film batteries in the prior art: low photovoltaic conversion efficiency, which can reach 12% for advanced manufacturers; small coating area, under the existing technology, the maximum coating area that can be achieved is 600×1000×4mm , the insurmountable technical problem is that with the increase of the coating area, the higher the requirements for coating uniformity, and the existing trimming plate structure cannot meet the needs of large-area coating uniformity

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