Preparation method of porous silicon-based tungsten trioxide nanorod composite-structure gas sensor element
A technology of gas sensor and tungsten trioxide, which is applied in the direction of instruments, scientific instruments, measuring devices, etc., can solve the problems of long recovery time and slow response speed, and achieve the effect of easy control and less process conditions
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Embodiment 1
[0038] (1) Silicon wafer cleaning
[0039] Cut a 2-inch p-type single-sided polished single crystal silicon wafer with a (100) crystal plane with a resistivity of 10-15Ω·cm and a thickness of 300μm into a rectangular silicon substrate with a size of 2.2cm×0.8cm. Soak in a mixture of concentrated sulfuric acid and hydrogen peroxide at a volume ratio of 3:1 for 40 minutes; then soak in a mixture of hydrofluoric acid and deionized water at a volume ratio of 1:1 for 30 minutes; then separately in acetone and ethanol They were cleaned ultrasonically for 5 minutes and then washed with deionized water.
[0040] (2) Preparation of silicon-based porous silicon
[0041] The porous silicon layer was prepared on the polished surface of the silicon wafer by double-slot electrochemical method. The etching solution used is a mixed solution of hydrofluoric acid and dimethylformamide with a volume ratio of 1:2, and the applied corrosion current density is 64mA / cm 2 , The corrosion time is 8min. Pr...
Embodiment 2
[0051] The difference between this embodiment and embodiment 1 is that the hydrothermal reaction time in step (3) is 6h, and the prepared porous silicon-based tungsten trioxide nanorod gas sensor element has a resistance to 1ppm NO at room temperature. 2 The gas sensitivity is 1.2.
Embodiment 3
[0053] The difference between this embodiment and embodiment 1 is that the hydrothermal reaction time in step (3) is 9h, and the prepared porous silicon-based tungsten trioxide nanorod gas sensor element has a resistance to 1ppm NO at room temperature. 2 The gas sensitivity is 1.3.
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