Method for monitoring height of step formed by photosensitive mask etched silicon carbide material in real time

Abstract

The invention discloses a method for monitoring the height of a step formed by photosensitive mask etched silicon carbide material in real time, the method comprises the following steps: a plurality of step height monitoring patterns are arranged on a silicon carbide material and are etched together with to-be-etched patterns, when the etching height is required to be detected, the photosensitive mask layer on the periphery of one of step height monitoring patterns is removed, so that monitoring of step height is performed. The method ensures real time monitoring and precision control of step height when the silicon carbide is etched through a drying method by utilizing a manner that the step height monitoring pattern areas are not developed after being exposed for many times, thereby effectively ensuring improvement of the performance of devices and operation of process flow.

Description

technical field [0001] The invention relates to the technical field of metal silicon carbide etching, in particular to a method for real-time height monitoring of steps formed by etching silicon carbide materials using a photosensitive mask. Background technique [0002] Silicon carbide (SiC), a wide bandgap semiconductor material, has the characteristics of wide bandgap width, high critical field strength, high thermal conductivity, and high carrier saturation rate. SiC epitaxy on SiC substrate is the most important semiconductor material for manufacturing high temperature, high frequency, high power devices, etc. It has super performance and broad application prospects. In SiC devices, various steps of different heights that need to be precisely controlled are commonly used structures in the manufacture of various transistor processes, so how to monitor the step height in real time in the manufacture of steps with micron-scale line widths is one of the key processes to ach...

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Problems solved by technology

[0004] Purpose of the invention: In view of the above-mentioned existing problems and deficiencies, the purpose of the present invention is to provide a silicon carbide photomask etching method with real-time monitoring of step height, which solves the problem of real-time silicon carbide step formation process with micron-level line width. Monitor the step etching depth to ensure that the etching pattern can meet the expected step height requirements through monitoring without removing the photolithography mask

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