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Preparation method of thin film transistor, thin film transistor, and array substrate

A thin-film transistor and composite thin-film technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of asynchronous film formation, matching of lithography processes, and industrialization of organic thin-film transistors, etc. Film differences, the effect of ensuring device performance

Active Publication Date: 2019-07-16
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the patterning of organic semiconductor materials in organic thin film transistors has always been a controversial topic. Because it cannot match the photolithography process, organic semiconductor materials cannot be patterned by photolithography, which makes the industrialization of organic thin film transistors a challenge. problem
These methods can directly form a patterned organic semiconductor thin film on the substrate for preparing the organic semiconductor, but this also leads to the problem of asynchronous film formation between patterns and patterns during the patterning process of the organic semiconductor layer, resulting in the formation of various films on the substrate. The film formation difference between patterns is large, which affects the device performance of organic thin film transistor arrays, which is an undesirable thing in industrial production

Method used

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  • Preparation method of thin film transistor, thin film transistor, and array substrate
  • Preparation method of thin film transistor, thin film transistor, and array substrate
  • Preparation method of thin film transistor, thin film transistor, and array substrate

Examples

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Effect test

Embodiment 1

[0067] This embodiment provides a thin film transistor manufacturing method and a thin film transistor correspondingly formed by using the thin film transistor manufacturing method, and the thin film transistor is an organic thin film transistor. The preparation method of the thin film transistor is by using a silicon wafer with a silicon dioxide insulating layer as a substrate, using the silicon wafer as the grid of an organic thin film transistor device, and the silicon dioxide insulating layer of the silicon wafer is insulated from the polymer formed by the polymer insulating material. The layer serves as the gate insulating layer of the organic thin film transistor device, the organic semiconductor layer serves as the active layer of the organic thin film transistor device, and subsequently forms the source electrode and the drain electrode of the organic thin film transistor device. The film formation synchronization between the active layer patterns of the organic thin fi...

Embodiment 2

[0131] This embodiment provides an array substrate, which includes the organic thin film transistor in Embodiment 1.

[0132] The array substrate can be arranged with a plurality of organic thin film transistors prepared by the preparation method of the organic thin film transistors in Embodiment 1, and the plurality of organic thin film transistors are arranged in an array, and further form gate lines and data lines arranged in a criss-cross pattern; Then, the existing process can be continued to prepare and form pixel electrodes and the like to form a liquid crystal type array substrate, or to prepare and form OLED devices and the like to form an OLED type array substrate.

[0133] Wherein, when a plurality of organic thin film transistors are formed on the array substrate, the pattern of the patterned self-assembled monomolecular layer is complementary to the pattern of the gate of the organic thin film transistor.

[0134] The array substrate can be prepared to form OLED d...

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Abstract

The invention belongs to the technical field of display, and relates to a preparation method of a thin film transistor, a thin film transistor and an array substrate. The preparation method of the thin film transistor: forming patterns including different surface energies on a substrate; coating a composite solution containing an organic semiconductor material and a polymer insulating material on the substrate, and forming a composite thin film; according to the patterns on the substrate with different surface energies , the composite film is patterned, and the composite film corresponding to the patterned area with relatively high surface energy is retained; the composite film is delaminated by the organic solvent vapor treatment method; two separate metals are formed on opposite sides of the patterned composite film electrode. In the preparation method of the organic thin film transistor, during the patterning process of forming the organic semiconductor layer, the film forming synchronization between the patterns is strictly guaranteed, and the gap between the active layer patterns of each organic thin film transistor on the substrate is eliminated or reduced. Therefore, the device performance of the organic thin film transistor array is guaranteed.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a preparation method of a thin film transistor, a thin film transistor and an array substrate. Background technique [0002] Organic thin film transistor (Organic Thin Film Transistor, referred to as OTFT) has been widely concerned by academia and industry since its discovery. Its manufacturing cost is low, and it can meet the requirements that silicon semiconductor processes such as flexibility and large area cannot meet. However, the patterning of organic semiconductor materials in organic thin film transistors has always been a controversial topic. Because it cannot match the photolithography process, organic semiconductor materials cannot be patterned by photolithography, which makes the industrialization of organic thin film transistors a challenge. problem. [0003] In the continuous efforts of the academic community in the past 10 years, more and more organic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/786H10K99/00
CPCH01L29/66742H01L29/786H10K71/00H10K10/46H10K71/13H10K71/15H10K77/10H10K10/488
Inventor 冯翔魏向东刘静邱云
Owner BOE TECH GRP CO LTD
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