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Method for monitoring ion implantation angle

A technology of ion implantation and ion implanter, which is applied in semiconductor/solid-state device testing/measurement, electrical components, semiconductor/solid-state device manufacturing, etc. It can solve problems such as monitoring the real incident angle of ion beams, so as to ensure device performance and improve qualification rate effect

Inactive Publication Date: 2011-02-02
HEJIAN TECH SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

In the existing batch type (Batch type) ion implanter, there is no such monitoring mechanism to monitor the real incident angle of the ion beam on the wafer

Method used

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  • Method for monitoring ion implantation angle
  • Method for monitoring ion implantation angle
  • Method for monitoring ion implantation angle

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Experimental program
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Embodiment Construction

[0023] The specific embodiments of the present invention will be described in more detail below with reference to the accompanying drawings.

[0024] see image 3 , a method for monitoring an ion implantation angle, comprising the steps of:

[0025] Step 1. Provide a monitoring wafer. The material of the monitoring wafer can be any suitable material. In this embodiment, an N-type silicon wafer, such as an N-type (110) silicon wafer, is used as the monitoring wafer. The channel effect is significant, and the monitoring wafer can be determined according to the type of chips actually manufactured.

[0026] Step 2. In the above monitoring wafer, use an ion implanter to introduce a predetermined dose of ions at a predetermined depth. The type, predetermined depth and predetermined dose of the ions can be determined according to the actual required depth and dose. In this embodiment, a predetermined dose of boron ions is introduced, and the implantation depth is determined by the ...

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Abstract

The invention relates to a method for monitoring an ion implantation angle, which comprises the following steps: 1, providing a monitoring wafer; 2, introducing ions of predetermined dosage into the monitoring wafer at a predetermined depth by using an ion implanter, wherein the implanted incident angle is 0 degree; and 3, measuring the damaged degree of the surface of the monitoring wafer finished by ion implantation in step 2, and judging the accuracy of the incident angle according to the symmetry of measured graphs. The method can accurately monitor the ion implantation angle based on theunchanged prior equipment so as to ensure that the ion implantation angle is in a set range, ensure the performance of a device and improve the qualification rate of the wafer.

Description

technical field [0001] The present invention relates to ion implantation technology in semiconductor manufacturing process, in particular to a method for monitoring ion implantation angle. Background technique [0002] Ion implantation is a very important technology in the manufacture of modern integrated circuits. It uses an ion implanter to achieve semiconductor doping, that is, implanting specific impurity atoms into a silicon semiconductor crystal in an ion-accelerated manner to change its conductivity and finally form a transistor. structure. [0003] Precise positioning of doping impurities is an important factor in ensuring optimal operation of advanced devices. For ion implantation, dose, energy and beam angle all need to be properly controlled. However, only the importance of dose and energy control has been known for a long time, and only recently has it been recognized that ion beam angle also affects device performance. Different ion incident angles will chang...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/66
Inventor 许义全王冬晶
Owner HEJIAN TECH SUZHOU
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