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Photomask with novel three-layer-film structure, and preparation method thereof

A technology of three-layer film and photomask, which is applied in the fields of chemical instruments and methods, photoplate making process of patterned surface, optics, etc., can solve the problem of inability to ensure etching time, etch rate, product storage period, and sodium ion precipitation Aggravation and other problems, to achieve the effect of clear etching lines, stable etching speed and good uniformity

Active Publication Date: 2013-08-07
湖南普照信息材料有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But its limitation is that the film layer cannot prevent the precipitation of sodium ions in the glass components, and the precipitated sodium ions will have a displacement reaction with the underlying bright chromium layer, forming a substance that is easily corroded, causing damage to the glass. After the product is developed and etched, there are small gaps on the edge of the product line, which affects the product quality. At the same time, the precipitation of sodium ions is mainly intensified with the prolongation of time, and the product storage period cannot be guaranteed.
But its limitations are: this carbon-free three-layer film structure cannot ensure etching time and good etching rate; in the corresponding preparation method, two different target materials are required

Method used

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  • Photomask with novel three-layer-film structure, and preparation method thereof
  • Photomask with novel three-layer-film structure, and preparation method thereof
  • Photomask with novel three-layer-film structure, and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0037] Such as figure 1The photomask of the most preferred new three-layer film structure of the present invention comprises glass substrate 1, chromium carbonitride barrier layer 11, chromium carbonitride light-shielding film layer 12, chromium carbonitride anti-reflection film Layer 13, the chromium carbonitride barrier layer 11, the chromium carbonitride light-shielding film layer 12, and the chromium carbonitride anti-reflection film layer 13 are sequentially plated on the glass substrate. The glass substrate 1 may be a soda-lime glass substrate, a quartz glass substrate, a borosilicate glass substrate or a corona glass substrate. The thickness of the chromium oxycarbonitride barrier layer 11 is The thickness of the chromium carbonitride light-shielding film layer 12 is The thickness of the chromium carbonitride anti-reflection film layer 13 is

[0038] Prepare the photomask of the most preferred new three-layer film structure of the present invention as follows:

...

Embodiment 2

[0047] Four different substrate glasses (soda-lime glass, quartz glass, borosilicate glass, and corona glass) were used to prepare 4 samples of the most preferred new three-layer film structure of the present invention, and the preparation method was carried out according to Example 1.

[0048] Put the above-mentioned coated sample glass into a clean oven, raise the temperature to 160°C and keep it warm for 1 hour, then cool it down to room temperature naturally. Then put the above samples into the following etching solution and soak for 15s (700g cerium ammonium nitrate + 150ml, 98% glacial acetic acid + 3500ml pure water), and then use a microscope to observe the pinholes one by one with a 500 times lens Condition.

[0049] The pinhole observation results are: 20 soda-lime glass, 0 quartz glass, 1 borosilicate glass, and 5 corona glass.

[0050] This example shows that the barrier layer of the present invention has different barrier effects on substrates made of different m...

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Abstract

The invention discloses a photomask with a novel three-layer-film structure, and a preparation method thereof. The photomask with the novel three-layer-film structure comprises a glass substrate, a barrier layer, a shading film layer, and an antireflection film layer. At least one layer in the three layers of films comprises a carbon component. According to the preparation method, one or more Cr target materials are provided; with a vacuum magnetron sputtering method, the barrier layer, the shading film layer, and the antireflection film layer are respectively plated on the glass substrate. With the method provided by the invention, a recess problem caused by sodium ion diffusion can be solved. Compared with a three-layer-film structure in prior art, the photomask with the novel three-layer-film structure can ensure etching time and good etching speed. Also, only one Cr target material is needed to be provided during the preparation process.

Description

technical field [0001] The invention relates to a photomask with a new three-layer film structure and a preparation method thereof. Background technique [0002] The mask structure used in the photomask blank is generally to form a chromium film layer on the surface of the glass substrate by vacuum thermal evaporation or magnetron sputtering, and then coat the mask layer with photoresist to form a complete chromium mask blank. The mask blank is then processed into a mask base plate required for manufacturing chips through a complete photolithography process such as exposure, development, and etching. [0003] Chromium mask blank, because the sodium ions and calcium ions in the soda-lime glass will gradually migrate to the surface, and inevitably diffuse into the bottom layer of the chromium mask, that is, the chromium or chromium nitride light-shielding film, and the amount of sodium ions will decrease over time. Gradually increase to form chromium sodium oxide structure. ...

Claims

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Application Information

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IPC IPC(8): B32B9/04B32B17/06G03F1/26B32B33/00G03F1/46
Inventor 李弋舟萧训山徐根李伟颜春李
Owner 湖南普照信息材料有限公司
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