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In-situ preparation method of ferroelectric-dielectric composite ceramic material

A multi-phase ceramic, in-situ preparation technology, applied in the field of electronic materials, can solve the problems of coarse particles, low interface bonding strength, thermodynamic instability, etc., and achieve the effects of low production cost, improved microwave performance, and improved density.

Inactive Publication Date: 2014-02-26
CHINA JILIANG UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to overcome the shortcomings of coarse particles, thermodynamic instability, and low interfacial bonding strength in the preparation of composite materials by kneading two phases, in-situ composite technology has emerged in recent years, that is, under certain conditions, one or Several enhanced phases, so as to achieve the purpose of strengthening

Method used

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  • In-situ preparation method of ferroelectric-dielectric composite ceramic material
  • In-situ preparation method of ferroelectric-dielectric composite ceramic material
  • In-situ preparation method of ferroelectric-dielectric composite ceramic material

Examples

Experimental program
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Effect test

example 1

[0019] A part of 0.0475mol of Ba(CH 3 COO) 2 , 0.0475mol of Sr(CH 3 COO) 2 and 0.01mol of Mg(CH 3 COO) 2 ; One part of 0.04mol Ba(CH 3 COO) 2 , 0.04mol of Sr(CH 3 COO) 2 and 0.04mol of Mg(CH 3 COO) 2 ; One part of 0.025mol of Ba(CH 3 COO) 2 , 0.025mol of Sr(CH 3 COO) 2 and 0.1mol of Mg(CH 3 COO) 2 ; One part of 0.01mol of Ba(CH 3 COO) 2 , 0.01mol of Sr(CH 3 COO) 2 and 0.16mol of Mg(CH 3 COO) 2 , respectively dissolved in 100ml of glacial acetic acid to obtain four solutions containing Ba, Sr and Mg;

[0020] 0.1molC 16 h 36 o 4 Ti dissolved in 0.2molC 5 h 8 o 2 Obtain Ti-containing solution; Mix the above-mentioned four kinds of solutions containing Ba, Sr and Mg with Ti solution respectively, and stir evenly to obtain (1- x ) Ba 0.5 Sr 0.5 TiO 3 - x Mg 2 TiO 4 ( x =0.05, 0.20, 0.50 and 0.80) precursor solution (raw material ratio shown in Table 1); the precursor solution at 110 o C drying, and then in a muffle furnace at 400o C heat treatme...

example 2

[0030] A part of 0.057mol of Ba(CH 3 COO) 2 , 0.038mol of Sr(CH 3 COO) 2 and 0.01mol of Mg(CH 3 COO) 2 ; One part of 0.048mol of Ba(CH 3 COO) 2 , 0.032mol of Sr(CH 3 COO) 2 and 0.04mol of Mg(CH 3 COO) 2 ; One part of 0.03mol of Ba(CH 3 COO) 2 , 0.02mol of Sr(CH 3 COO) 2 and 0.1mol of Mg(CH 3 COO) 2 ; One part of 0.012mol of Ba(CH 3 COO) 2 , 0.008mol of Sr(CH 3 COO) 2 and 0.16mol of Mg(CH 3 COO) 2 , respectively dissolved in 100ml of glacial acetic acid to obtain four solutions containing Ba, Sr and Mg;

[0031] 0.1molC 16 h 36 o 4 Ti dissolved in 0.2molC 5 h 8 o 2 Obtain Ti-containing solution; Mix the above-mentioned four kinds of solutions containing Ba, Sr and Mg with Ti solution respectively, and stir evenly to obtain (1- x ) Ba 0.6 Sr 0.4 TiO 3 - x Mg 2 TiO 4 ( x =0.05, 0.20, 0.50 and 0.80) precursor solution (raw material ratio shown in Table 3); the precursor solution at 110 o After drying at C temperature, in a muffle furnace at 400 ...

example 3

[0036] A part of 0.0285mol of Ba(CH 3 COO) 2 , 0.0665mol of Sr(CH 3 COO) 2 and 0.01mol of Mg(CH 3 COO) 2 ; One part of 0.024mol of Ba(CH 3 COO) 2 , 0.056mol of Sr(CH 3 COO) 2 and 0.04mol of Mg(CH 3 COO) 2 ; One part of 0.015mol of Ba(CH 3 COO) 2 , 0.035mol of Sr(CH 3 COO) 2 and 0.1mol of Mg(CH 3 COO) 2 ; One part of 0.006mol of Ba(CH 3 COO) 2 , 0.014mol of Sr(CH 3 COO) 2 and 0.16mol of Mg(CH 3 COO) 2 , respectively dissolved in 100ml of glacial acetic acid to obtain four solutions containing Ba, Sr and Mg;

[0037] 0.1molC 16 h 36 o 4 Ti dissolved in 0.2molC 5 h 8 o 2 Obtain Ti-containing solution; Mix the above-mentioned four kinds of solutions containing Ba, Sr and Mg with Ti solution respectively, and stir evenly to obtain (1-x ) Ba 0.3 Sr 0.7 TiO 3 - x Mg 2 TiO 4 ( x =0.05, 0.20, 0.50 and 0.80) precursor solution (raw material ratio shown in Table 4); o After drying at C temperature, in a muffle furnace at 400 o C heat treatment for 2h f...

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Abstract

The invention relates to an in-situ preparation method of a ferroelectric-dielectric composite ceramic material. The chemical formula of the ferroelectric-dielectric composite ceramic material is (1-x)Ba1-nSrnTiO3-xMg2TiO4, wherein n is more than 0 and less than 1 and x is more than 0 and less than 1. A preparation process comprises the following steps of: mixing Ba, Sr and Mg solutions with a Ti solution, and agitating uniformly to prepare a (1-x)Ba1-nSrnTiO3-xMg2TiO4 precursor solution; drying the precursor solution and carrying out heat treatment to obtain powder; utilizing polyvinyl alcohol as a bonding agent to granulate and carry out compression molding; and then carrying out sintering treatment. The in-situ preparation method is simple in process; and the synthesized composite ceramic has smaller composite ceramic, fewer inner defects and low production cost, and is suitable for commercial production. The prepared ferroelectric-dielectric composite ceramic material has low dielectric constant, higher Q value and high dielectric tuning rate, and can meet the application requirements of a dielectric tuning microwave device.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and in particular relates to an in-situ preparation method of a ferroelectric-dielectric composite ceramic material. Background technique [0002] Barium titanate-based ferroelectric materials (such as Ba 1-n Sr n TiO 3 (BST), BaZr 1-n Ti n o 3 (BZT)) have a high dielectric tuning rate and have potential applications in dielectrically tuned microwave devices. Especially BST ferroelectric materials, because of their relatively low microwave loss, have attracted the attention of many researchers. The United States is at the forefront of research on BST ferroelectric phase shifters in the world. Among them, the BST ferroelectric phase shifters designed and developed by Agile Materials & Technologies Inc. and Paratek Microwave Inc., compared with traditional GaAs and MEMS-based phase shifters, Not only the cost is greatly reduced, but also the size and energy consumption are reduc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/468C04B35/465C04B35/47C04B35/624
Inventor 张景基姬如东王疆瑛
Owner CHINA JILIANG UNIV
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