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Method for synthesizing graphene film through chemical reaction

A graphene film and chemical reaction technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of poor electronic transport performance of graphene film, and achieve the effect of expansion selectivity, easy control of size and wide reaction conditions

Active Publication Date: 2013-04-03
NINGBO RONGHE WIRE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The oxidation-reduction method of graphite uses graphite as the carbon source material and undergoes the oxidation reaction of graphite and the reduction reaction of graphene oxide to obtain reduced graphene oxide; although the electron transport performance of the graphene film synthesized by this method is relatively low. Poor, but graphene films can be synthesized on a large scale; in addition, the carbonaceous material used in the oxidation-reduction method of graphite is only graphite, and there is no other choice

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  • Method for synthesizing graphene film through chemical reaction
  • Method for synthesizing graphene film through chemical reaction
  • Method for synthesizing graphene film through chemical reaction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Embodiment 1: the ionization of alcohols grows graphene film on Si (100) substrate

[0030] Include the following steps:

[0031] 1) Alcohol is dissociated into carbocations under the catalysis of Lewis acid (Lewis acid), and the reaction process is:

[0032] R-OH+H + →R + -OH 2 →R + +H 2 O, where R stands for C n h 2n+1 (n≥1).

[0033] 2) Put the Si(100) substrate in the above reaction solution, and the generated carbon-containing ions R + Adsorbed on the silicon substrate;

[0034] 3) will be adsorbed with R + The substrate is taken out from the solution, and then this substrate is placed in a quartz tube;

[0035] 4) Pass hydrogen to the quartz tube and heat-treat at 930°C for 10min, and finally drop to 20°C at a cooling rate of 50°C / min to obtain a graphene film with a thickness of about 17nm ( figure 2 ).

[0036] Effect: The chemical reaction that produces active carbon atoms or carbon-containing active groups includes but not limited to heterocleava...

Embodiment 2

[0038] Embodiment 2: Taking non-polar carbon-containing compound as raw material method to synthesize graphene film

[0039] Include the following steps:

[0040] 1) Use superacids to extract negative hydrogen ions from non-polar compounds such as alkanes to generate carbocations. The typical process of this type of reaction is:

[0041] (CH 3 ) 3 C-H+SbF 5 ·FSPO 3 H→(CH 3 ) 3 C + +SbF 5 ·FSPO 3 - +H 2

[0042] 2)(CH 3 ) 3 C-H and SbF 5 ·FSPO 3 H undergoes a chemical reaction to form (CH 3 ) 3 C + After carbocations, guide the reaction product onto the Ni polycrystalline substrate;

[0043] 3) Then in H 2 In the atmosphere of / Ar, heat treatment at 1000°C for 10 minutes, and finally reduce the temperature to 25°C by 40°C / min, so that graphene with a thickness of 0.335nm was obtained on the Ni substrate; image 3 is the Raman spectrum of the synthesized graphene.

[0044] Effect: The chemical reactions that produce active carbon atoms or carbon-containing ...

Embodiment 3

[0046] Embodiment 3: the addition reaction synthesis graphene film of unsaturated bond

[0047] A typical reaction process is: R-C=R'+H + → R-C-R'H (R is an alkyl group, R' is O, C, N, S) includes the following steps:

[0048] 1) After reacting alkenes such as butene with acids such as HCl, CH 3 -CH 2 -CH=CH 2 +H + →CH 3 -CH 2 -CH 2 -CH 3 , transfer the reaction product to the polymer polyethylene terephthalate (PET) substrate;

[0049] 2) Then electron beams are used to process the reaction product on the PET. During the treatment, the temperature of the PET substrate is kept at 100°C, and the processing time is 3 hours; finally, the temperature is lowered to 25°C to obtain graphene with a thickness of 50nm film( Figure 4 ).

[0050] Effect: The chemical reactions that produce active carbon atoms or carbon-containing active groups include but are not limited to heterocleavage of halogenated hydrocarbons. Alcohols, ethers, and acyl halides can also be dissociated i...

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Abstract

The invention discloses a method for synthesizing a graphene film through chemical reaction. Through a chemical reaction between a gaseous carbon source, a solid carbon source and a liquid carbon source containing carbon elements or the mixed carbon source material of any two or more of the carbon sources and a chemical reacting substance, carbon atoms in the carbon source material are activated and then deposit on a substrate to grow a graphene film. The method disclosed by the invention is characterized in that the method for producing carbon atoms for synthesizing a graphene film is different from conventional methods such as chemical vapor deposition, the carbon source material for synthesizing a graphene film is widely available, and the synthesis of the graphene film is not restricted by the substrate; the structure and size of the grown graphene film are easy to control; and the method is suitable for preparing graphene films in large scale.

Description

technical field [0001] The invention relates to a synthesis method of a graphene film, in particular to a method for synthesizing a graphene film through a chemical reaction. Background technique [0002] Graphene is a two-dimensional structure material composed of honeycomb single-layer carbon atoms, also known as single-layer graphite; in terms of physical properties, it is generally believed that the material with more than ten layers of graphene stacked is a three-dimensional structure of graphite, carbon nanotubes It is a one-dimensional nanomaterial made of graphene rolled into a barrel. Graphene has excellent two-dimensional electrical, optical, thermal, mechanical properties and chemical stability. Its unique two-dimensional structure and excellent crystallographic quality make it suitable for ultra-fast micro-nano optoelectronic devices, radio frequency devices, clean energy and various Sensors and other fields have important practical value. For example, electron...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/184
Inventor 徐明生陈红征施敏敏吴刚汪茫
Owner NINGBO RONGHE WIRE CO LTD
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