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Gallium arsenide monocrystal growing method

A growth method and technology of gallium arsenide, applied in the field of growth of gallium arsenide single crystal, can solve the problems of large thermal stress, many GaAs crystal defects, and high dislocation density, and achieve small thermal stress, low dislocation density, and high dislocation density. Even heating effect

Inactive Publication Date: 2012-09-19
SHANGHAI INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its disadvantage is that the obtained GaAs crystal has many defects, such as twins, large thermal stress, and high dislocation density.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] A method for growing a gallium arsenide (GaAs) single crystal, specifically comprising the following steps:

[0016] (1) Put the gallium arsenide polycrystalline raw material into the PNB crucible with the seed crystal placed in advance, and then place the PNB crucible on the descending table in the growth furnace;

[0017] (2) Place a PNB crucible on the lowering table, and adjust the temperature of the growth furnace body at 1200°C to melt the top of the seed crystal;

[0018] (3), Step (2) After the top of the seed crystal is melted, the descending platform is lowered and rotated at the same time, the rotation speed is 0.1r / h, after 12 hours of reaction, the crystal growth ends;

[0019] (4), Step (3) After the crystal growth is completed, move the PNB crucible to the constant temperature zone in the growth furnace, and perform in-situ annealing on the GaAs crystal. During the annealing process, the temperature in the growth furnace is controlled at 950°C and the tim...

Embodiment 2

[0021] A method for growing a gallium arsenide (GaAs) single crystal, specifically comprising the following steps:

[0022] (1) Put the gallium arsenide polycrystalline raw material into the PNB crucible with the seed crystal placed in advance, and then place the PNB crucible on the descending table in the growth furnace;

[0023] (2) Place 3 PNB crucibles on the lowering platform, adjust the temperature of the growth furnace body at 1250°C, and melt the top of the seed crystal;

[0024] (3) Step (2) After the top of the seed crystal is melted, the descending table is lowered and rotated at the same time, the rotation speed is 0.5r / h, after 10 hours of reaction, the crystal growth ends;

[0025] (4), step (3) After the crystal growth is completed, move the PNB crucible to the constant temperature zone in the growth furnace, and perform in-situ annealing on the GaAs crystal. During the annealing process, the temperature in the growth furnace is controlled at 1000°C and the time...

Embodiment 3

[0027] A method for growing a gallium arsenide (GaAs) single crystal, specifically comprising the following steps:

[0028] (1) Put the gallium arsenide polycrystalline raw material into the PNB crucible with the seed crystal placed in advance, and then place the PNB crucible on the descending table in the growth furnace;

[0029] (2) Place 5 PNB crucibles on the lowering table, and adjust the temperature of the growth furnace body at 1300°C to melt the top of the seed crystal;

[0030] (3), Step (2) After the top of the seed crystal is melted, the descending platform is lowered and rotated at the same time, the rotation speed is 1r / h, after 15 hours of reaction, the crystal growth ends;

[0031] (4), Step (3) After the crystal growth is completed, move the PNB crucible to the constant temperature zone in the growth furnace, and perform in-situ annealing on the GaAs crystal. During the annealing process, the temperature in the growth furnace is controlled at 1100°C for 15 hour...

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Abstract

The invention discloses a gallium arsenide monocrystal growing method. The gallium arsenide monocrystal growing method comprises the following steps: putting a gallium arsenide polycrystal raw material into PNB (phosphorus nitrogen boron) crucibles in which seed crystals are put in advance; putting the PNB crucibles on a descending table in a growing furnace, wherein 1-5 PNB crucibles are put on the descending table; adjusting the furnace temperature of the growing furnace to 1200-1300 DEG C so as to rotate the descending table while descending the descending table after the tops of the seed crystals are melted; after crystal growing, moving the PNB crucibles to a constant-temperature area in the growing furnace to perform in-situ annealing on GaAs (gallium arsenide) crystals, wherein in the annealing process, the temperature in the growing furnace is controlled at 950-1100 DEG C, and the annealing time is 8-12 h; and cooling the GaAs crystals to room temperature at a speed rate of 20-70 DEG C per hour, thus obtaining GaAs monocrystals. By the gallium arsenide monocrystal growing method, the grown crystals are small in thermal stress, good in uniformity and relatively low in dislocation density.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a growth method of gallium arsenide single crystal. Background technique [0002] Gallium arsenide (GaAs) is one of the most important and widely used semiconductor materials in compound semiconductors, and it is also the most mature and produced compound semiconductor material. Because gallium arsenide has the characteristics of high electron mobility (5 to 6 times that of silicon), large band gap (1.43eV, 1.1eV for silicon) and direct band gap, it is easy to be made into semi-insulating material. It has low carrier concentration, good photoelectric characteristics, and also has excellent characteristics such as heat resistance, strong radiation resistance and sensitivity to magnetic fields. Devices made of gallium arsenide materials have good frequency response, fast speed, and high operating temperature, which can meet the needs of integrated optoelectronics. It is currently th...

Claims

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Application Information

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IPC IPC(8): C30B29/42C30B11/00
Inventor 房永征金敏徐家跃张娜王占勇张彦江国健
Owner SHANGHAI INST OF TECH
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