Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method for patterned graphene membrane

A graphene film, graphene technology, applied in the direction of graphene, patterned surface photoengraving process, opto-mechanical equipment, etc., can solve the problems of complex template manufacturing process and high cost, and achieve the effect of low cost and simple operation

Inactive Publication Date: 2012-09-05
BOE TECH GRP CO LTD
View PDF5 Cites 44 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method requires different templates for graphene with different graphics, and the template manufacturing process is complicated and the cost is too high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for patterned graphene membrane
  • Preparation method for patterned graphene membrane
  • Preparation method for patterned graphene membrane

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0040] Such as Figure 4 Shown, the preparation method of patterned graphene film of the present invention comprises the following steps:

[0041] 1) First coat the photoresist or PMMMA2 on the substrate 1 by spin coating or scraping coating, and pattern the photoresist by ultraviolet lithography or electron beam etching process, in which the region where the graphene pattern needs to be formed The photoresist or PMMMA is removed by exposure and development process. Wherein, the substrate may be glass, metal, quartz, or an organic film, and the organic film may be a PET film, a PS film, a PE film, a PAN film, or the like. The thickness of photoresist or PMMMA is 1-10μm, such as figure 1 shown.

[0042] 2) Prepare graphene oxide solution: add graphite, sodium nitrate and concentrated sulfuric acid under the condition of ice-water bath, stir well and slowly add potassium permanganate, then stir at 25-40°C until the solution becomes paste; after that Add deionized water, cont...

Embodiment 1

[0047] Such as Figure 4As shown, the preparation method of the patterned graphene film of the present embodiment comprises the following steps:

[0048] 1) PMMA2 is first spin-coated on the glass substrate 1, the thickness of the PMMA is 5 μm, and the PMMA is patterned by an electron beam etching process, wherein the PMMA in the area where the graphene pattern needs to be formed is removed. Such as figure 1 shown.

[0049] 2) Preparation of graphene oxide solution: under ice-water bath conditions, add 1g graphite, 0.25g sodium nitrate, 11.75ml concentrated sulfuric acid (98%) in a 200ml beaker, slowly add 1.5g potassium permanganate after stirring well, and then add 1.5g potassium permanganate at 35 °C and stir until the solution turns into a paste. Then quickly add 46ml of deionized water, continue to stir for 15min, then add 140ml of deionized water and 1.5ml of hydrogen peroxide, and stir for 10min. The resulting suspension was filtered and washed with dilute hydrochlo...

Embodiment 2

[0054] Such as Figure 4 As shown, the preparation method of the patterned graphene film of the present embodiment comprises the following steps:

[0055] 1) Spin-coat the positive photoresist 2 on the PET film substrate 1 first, the thickness of the photoresist is 10 μm, and pattern the photoresist through the ultraviolet lithography process, wherein the photoresist in the region where the graphene pattern needs to be formed The resist is removed through an exposure process. Such as figure 1 shown.

[0056] 2) Prepare graphene oxide solution:

[0057] Under the condition of ice-water bath, add 1.5g of graphite, 0.35g of sodium nitrate, 11.75ml of concentrated sulfuric acid (98%) into a 200ml beaker, stir well and slowly add 2.0g of potassium permanganate, then stir at 40°C until the solution becomes Mushy. Then quickly add 46ml of deionized water, continue to stir for 15min, then add 140ml of deionized water and 1.5ml of hydrogen peroxide, and stir for 10min. The result...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method for a patterned graphene membrane. The preparation method comprises the following steps of: firstly coating photoresist or PMMA (polymethyl methacrylate) on a substrate; carrying out patterning process on the substrate; removing the photoresist or PMMA of the area required to form a grapheme pattern; then coating graphene oxide solution on the substrate to form a membrane; carrying out reduction on the obtained substrate in hydrazine steam; processing the graphene oxide into graphene to obtain the graphene membrane; finally immersing the obtained substrate in acetone or photoresist stripping solution; and removing the photoresist or PMMA and the graphene membrane on the photoresist or PMMA to obtain the patterned graphene membrane. With the preparation method disclosed by the invention, the patterned photoresist or PMMA is simply formed on the substrate so as to prepare the patterned graphene membrane. The method is simple to operate and low in cost, can be used on a large scale, does not damage the substrates and is suitable for various substrates, and the application of the solution method in preparing the graphene is expanded.

Description

technical field [0001] The invention relates to a method for preparing a graphene device, in particular to a method for preparing a patterned graphene film. Background technique [0002] Graphene is a two-dimensional crystal composed of carbon atoms in a honeycomb arrangement. Due to its quantum transport properties, high conductivity, mobility, and transmittance, graphene and its related devices have become a research hotspot in the fields of physics, chemistry, biology, and material science. So far, people have prepared a variety of devices with graphene as the basic functional unit, wrapping field-effect transistors, solar cells, nanogenerators, sensors, etc. [0003] At present, people can obtain graphene through various methods, such as mechanical exfoliation, chemical vapor deposition, thermal decomposition of SiC substrate and chemical methods. [0004] The mechanical exfoliation method is a method of repeatedly pasting and peeling off the adhesive tape on graphite ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22C23C18/16G03F7/00
CPCC23C18/06C23C18/1208C23C18/1279C23C18/1295G03F7/40G03F7/422B82Y30/00B82Y40/00C01B32/184B05D5/00
Inventor 张锋戴天明姚琪
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com