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MgZnO/N-propyl bromide (NPB) ultraviolet light detector and producing method thereof

A detector and ultraviolet light technology, applied in the field of optoelectronic information, can solve the problems of low organic electron mobility, p-type doping of inorganic wide bandgap semiconductors, etc.

Inactive Publication Date: 2012-08-01
BEIJING JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is to solve the problem of p-type doping of inorganic wide bandgap semiconductors and the problem of low organic electron mobility

Method used

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  • MgZnO/N-propyl bromide (NPB) ultraviolet light detector and producing method thereof
  • MgZnO/N-propyl bromide (NPB) ultraviolet light detector and producing method thereof
  • MgZnO/N-propyl bromide (NPB) ultraviolet light detector and producing method thereof

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Embodiment Construction

[0018] A MgZnO / NPB ultraviolet light detector, the ultraviolet light detector is a single-phase Mg grown on a quartz ITO substrate x Zn 1-x O thin film, NPB thin film, LiF thin film and electrode. The single-phase Mg x Zn 1-x In O, X=0.1-0.4, and the thickness is 200-350nm; the thickness of the NPB film is 50-120nm; the thickness of the LiF film is 0.5-2nm.

[0019] A kind of MgZnO / NPB ultraviolet photodetector manufacture method one, the step of this method comprises:

[0020] Step 1 imports the cleaned quartz ITO substrate into the pre-growth chamber of MBE;

[0021] Step 2: Treat in the pre-growth chamber at 750°C for 30 minutes;

[0022] Step 3. The quartz ITO substrate processed in step 2 is introduced into the growth chamber of MBE, and at a growth temperature of 400°C, Mg with a thickness of 200nm is grown. x Zn 1-x O film, where X=0.1;

[0023] Step 4 will Mg x Zn 1-x The O thin film is introduced into the thermal evaporation, and the Mg x Zn 1-x On the O f...

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Abstract

An MgZnO / NPB ultraviolet light detector and a producing method thereof belong to the field of optoelectronic information, are mainly used for ultraviolet light detectors which generate low bias voltage and high response and solve the problems of inorganic wide band-gap semiconductor p-type doping and low organic electronic mobility. The detector is composed of a single phase MgxZn1-xO film which is grown on a quartz indium tin oxide (ITO) substrate, a NPB film, an LiF film and an electrode. The producing method thereof comprises that the quartz ITO substrate is pretreated in a molecular beam epitaxy (MBE) growth chamber; the MgxZn1-xO film with the thickness of 200-300nm is grown at the growth temperature of 400-500 DEG C inside the MBE growth chamber, and x=0.1-0.4; then thermal evaporation is conducted, and the NPB film with the thickness of 50-120nm is grown on the MgxZn1-xO film; the LiF electrode modification layer with the thickness of 0.5-2nm is grown on the NPB film; and the electrode is produced on the LiF electrode modification layer, so that the MgZnO / NPB ultraviolet light detector having a quartz ITO / MgxZn1-xO / NPB / LiF / electrode structure is produced.

Description

technical field [0001] The invention belongs to the field of optoelectronic information, and relates to a MgZnO / NPB ultraviolet light detector, which is mainly used to generate low bias voltage and high response ultraviolet light detector. Background technique [0002] Ultraviolet light detectors are key components in many application fields, and are widely used in fire detection, flame sensing, astronomical observation and research, aviation and aerospace tracking and control, meteorological environment monitoring and forecasting, medical and health and biological engineering, communications and other fields. Traditionally, photomultiplier tubes, filters, and fluorescence down-conversion technology are used for ultraviolet detection. However, this equipment has disadvantages such as high cost, high pressure during operation, large volume, and heavy weight. The wide bandgap semiconductor ultraviolet detector has the advantages of low cost, long life, low driving voltage, sma...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/0296H01L31/18
CPCY02P70/50
Inventor 张希清胡佐富刘凤娟李振军王永生
Owner BEIJING JIAOTONG UNIV
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