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Diamond abrasive wire cutting fluid for semiconductor precision sheet and preparation method of diamond abrasive wire cutting fluid

A diamond sand and semiconductor technology, applied in the petroleum industry, additives, lubricating compositions, etc., can solve the problems of large energy release, increase in specific surface area, and decrease in activation energy, and achieve the goal of being gentle on the human body, low in cost, and easy to recycle. Effect

Active Publication Date: 2012-08-01
CHANGZHOU JUNHE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the diamond wire cutting fluid is mainly composed of polyethylene glycol and pure water. During cutting, the diamond coated on the outer layer of the wire rubs against the silicon wafer, and the friction generated by the diamond wire is much higher than that of the traditional mortar suspension. The instantaneous high temperature is also high when the silicon powder is too fine, and the specific surface area of ​​the chip silicon powder is too fine, so that the activation energy required for the reaction is greatly reduced. At this time, it is very easy to react with the moisture in the cutting fluid to release hydrogen, and hydrogen is easy Gas, hydrogen has a large calorific value, and the energy released during the explosion is also large. If it accumulates to a certain extent, there will be certain safety hazards.

Method used

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  • Diamond abrasive wire cutting fluid for semiconductor precision sheet and preparation method of diamond abrasive wire cutting fluid
  • Diamond abrasive wire cutting fluid for semiconductor precision sheet and preparation method of diamond abrasive wire cutting fluid
  • Diamond abrasive wire cutting fluid for semiconductor precision sheet and preparation method of diamond abrasive wire cutting fluid

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Embodiment Construction

[0019] The raw material of the semiconductor precision thin diamond sand wire cutting fluid of the present invention is composed of the following components in mass parts ratio, including 55-80 polyol; 0.01-0.5 hydrogen inhibitor; 0.01-0.5 acid agent; 0.1- 1.0 surface active agent; 1.0-10.0 dispersant; 0.01-0.5 preservative; 10-35 deionized water; wherein: the polyol of the present invention is a mixture of propylene glycol and polyethylene glycol at a ratio of 1 to 1:2, And the molecular weight of polyethylene glycol is between 100 and 600. The use of propylene glycol mixed with polyethylene glycol has better lubricity than simply using polyethylene glycol.

[0020] The hydrogen inhibitor of the present invention is one or a mixture of any two or more of octadecenoic acid, tridecanol, glycerin, isononanoic acid, phthalic acid, alcohol ether carboxylic acid or polyether, and the mixture is such as A mixture of octadecenoic acid and tridecyl alcohol, or a mixture of octadecenoic a...

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Abstract

The invention relates to a diamond abrasive wire cutting fluid for a semiconductor precision sheet. The raw materials of the diamond abrasive wire cutting fluid consist of the following compositions in parts by mass: 30-80 parts of polyalcohol, 0.01-0.5 parts of hydrogen inhibitor, 0.01-0.5 parts of acid, 0.1-1.0 part of surfactant, 1.0-10.0 parts of dispersing agent, 0.01-0.5 parts of preservative and 10-35 parts of deionized water, wherein the polyalcohol is mixture of propylene glycol and polyethylene glycol with ratio being 1 to (1:2) and the molecular weight of the polyethylene glycol is between 100 and 600. The diamond abrasive wire cutting fluid for the semiconductor precision sheet has the characteristics that the hydrogen is effectively inhibited from being generated, the lubricating effect is remarkable, the cleaning is easy to conduct, the cost is low and the performance is stable.

Description

Technical field [0001] The invention relates to a semiconductor precision thin diamond sand wire cutting fluid and a preparation method thereof, and belongs to the technical field of solar silicon wafer cutting processing. Background technique [0002] Various super hard and brittle materials, such as monocrystalline silicon, polycrystalline silicon, germanium, gallium arsenide, quartz, indium gallium nitride, gemstones or non-metallic materials, all adopt the wire cutting process of ordinary diamond wire. In the process of cutting silicon wafers, the cut silicon wafers need to be cooled and lubricated by cutting fluid. At present, most traditional silicon wafer cutting uses free mortar suspension cutting float. This cutting suspension is mainly composed of silicon carbide. Under the high-speed movement of the steel wire, the suspension is caused to carry the angular silicon carbide particles to continuously roll. The way to enter the cutting area, due to the certain tension on ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C10M173/02C10M161/00C10N30/06C10N30/04C10N30/12C10N40/00
Inventor 陆由东郑虎祥吴伟峰蒋勇
Owner CHANGZHOU JUNHE TECH
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