Method for producing multilayer metal-silicon nitride-metal capacitor
A multi-layer metal and metal capacitor technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of increasing manufacturing cost burden, achieve the effect of improving breakdown voltage, increasing capacitance, and improving performance
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[0042] Firstly, a high-k value silicon nitride film is deposited on a silicon substrate by plasma-enhanced chemical vapor deposition (PECVD), and the silicon nitride deposition is completed by a two-step cycle of silicon nitride deposition-oxygen-containing gas treatment , the oxygen-containing gas used is nitric oxide, the gas flow rate of the oxygen-containing gas treatment is 3000 sccm, the treatment temperature is 400 degrees Celsius, the thickness of each silicon nitride deposition is 2 nanometers, and the silicon nitride-oxygen-containing gas treatment is used Two-step cycle to achieve the final desired silicon nitride thickness, figure 1 A schematic cross-sectional view of a silicon nitride film layer is shown. The silicon nitride in the non-MOM area is then removed by photolithography and etching, figure 2 A schematic cross-sectional view showing the completion of photolithography and etching to remove the silicon nitride film in the non-MOM capacitor region. A low-...
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