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Method for producing multilayer metal-silicon nitride-metal capacitor

A multi-layer metal and metal capacitor technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of increasing manufacturing cost burden, achieve the effect of improving breakdown voltage, increasing capacitance, and improving performance

Active Publication Date: 2014-12-10
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although the structure is simple, the formation of multilayer MIM capacitors often requires many additional process steps, which increases the burden on many manufacturing costs.

Method used

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  • Method for producing multilayer metal-silicon nitride-metal capacitor
  • Method for producing multilayer metal-silicon nitride-metal capacitor
  • Method for producing multilayer metal-silicon nitride-metal capacitor

Examples

Experimental program
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Embodiment 1

[0042] Firstly, a high-k value silicon nitride film is deposited on a silicon substrate by plasma-enhanced chemical vapor deposition (PECVD), and the silicon nitride deposition is completed by a two-step cycle of silicon nitride deposition-oxygen-containing gas treatment , the oxygen-containing gas used is nitric oxide, the gas flow rate of the oxygen-containing gas treatment is 3000 sccm, the treatment temperature is 400 degrees Celsius, the thickness of each silicon nitride deposition is 2 nanometers, and the silicon nitride-oxygen-containing gas treatment is used Two-step cycle to achieve the final desired silicon nitride thickness, figure 1 A schematic cross-sectional view of a silicon nitride film layer is shown. The silicon nitride in the non-MOM area is then removed by photolithography and etching, figure 2 A schematic cross-sectional view showing the completion of photolithography and etching to remove the silicon nitride film in the non-MOM capacitor region. A low-...

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PUM

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Abstract

The invention provides a method for producing a multilayer metal-silicon nitride-metal capacitor, which includes the following steps: 1) using a plasma enhanced chemical vapor deposition (PECVD) method to deposit a silicon nitride thin film with a high k value on a silicon chip substrate; 2) removing silicon nitride in a non-metal-oxide-metal area through photoetching and etching; 3) depositing a dielectric layer with a low k value; 4) removing redundant silicon nitride through chemical mechanical polishing, and forming a mixing layer of low-k-value dielectric and silicon nitride; 5) completing photoetching and etching to form a metallic channel in the low-k-value dielectric and the silicon nitride; 6) forming metal fillers of a lead and a metal-oxide-metal (MOM) capacitor after deposition and chemical mechanical polishing of a metal layer are completed; and 7) repeating Step 1) to Step 6) to form multilayer MOM capacitor. The method for producing the multilayer metal-silicon nitride-metal capacitor can effectively improve the capacitance of the interlayer capacitor, can also effectively improve various electric characteristics of the MOM capacitor such as breakdown voltage, leakage current and the like, can effectively improve electric uniformity among various apparatuses, and is very practical.

Description

technical field [0001] The invention relates to a method for manufacturing a capacitor in the manufacture of semiconductor integrated circuits, in particular to a method for manufacturing a multilayer metal-silicon nitride-metal capacitor. Background technique [0002] With the trend of applying standard complementary metal-oxide-semiconductor (CMOS) technology to analog and radio-frequency complementary metal-oxide-semiconductor (RFCMOS) integrated circuits, more and more passive components have emerged. Capacitors are important components in integrated circuits and are widely used in memory, microwave, radio frequency, smart card, high voltage and filter chips. A widely used capacitor configuration in chips is metal-insulator-metal (MIM) parallel to the silicon substrate. Among them, the metal is copper, aluminum, etc., whose manufacturing process is easily compatible with the metal interconnection process, and the insulator is a dielectric material with a high dielectric...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
Inventor 毛智彪胡友存徐强
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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