Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Zinc oxide micro-nano array and preparation method thereof

A zinc oxide array, micro-nano technology, applied in the direction of zinc oxide/zinc hydroxide, nanotechnology, etc., can solve difficult micro, nano device structure, and it is difficult to realize the controllable positioning device growth of zinc oxide nanostructure, method Limiting problems such as chemical and physical vapor deposition, to achieve the effect of wide range of uses, simple preparation process and strong operability

Inactive Publication Date: 2012-05-30
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
View PDF2 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, although people have been able to synthesize zinc oxide submicron and nanostructures and zinc oxide submicron and nanowire aggregates with different shapes, the methods used are limited to chemical and physical vapor deposition, and the method of vapor deposition is difficult to achieve. Controlled Positional Device Growth of ZnO Nanostructures
Even though some researchers have prepared zinc oxide nanowire aggregates by chemical methods, the obtained structures are difficult to be used in the construction of micro-nano devices, and there is not much research on the position-controlled preparation of zinc oxide submicron and nanowire arrays. good solution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Zinc oxide micro-nano array and preparation method thereof
  • Zinc oxide micro-nano array and preparation method thereof
  • Zinc oxide micro-nano array and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] This example is used to illustrate the preparation method of the zinc oxide micro-nano array provided by the present invention.

[0028] 1) Preparation of precursor solution: 3 grams of Zn(NO 3 ) 2 ·6H 2 O (0.1mol / L) and 0.7 g (CH 2 ) 6 N 4 (0.05mol / L) was added to 100ml deionized water, and kept stirring for at least 10 minutes until the solution was uniform;

[0029] 2) Prepare the substrate: select a silicon wafer with a smooth surface as the substrate, after ultrasonic cleaning, thermally evaporate metal zinc on the silicon wafer, and feed high-temperature oxygen to make it react to form a zinc oxide film (thickness of the film 45 nanometers); after the substrate is cooled, spray a layer of photoresist with a thickness of 45 nanometers on the film (MJB4 contact alignment exposure system produced by SUSS in Germany; technical indicators: resolution 0.7 microns 365 nanometers light source, The alignment accuracy is 0.5 microns), and then partial electron beam ex...

Embodiment 2

[0033] This example is used to illustrate the preparation method of the zinc oxide micro-nano array provided by the present invention.

[0034] 1) Preparation of precursor solution: 0.3 g of Zn(NO 3 ) 2 ·6H 2 O (0.01mol / L) and 0.14 grams (CH 2 ) 6 N 4 (0.01mol / L) was added to 100ml deionized water, and kept stirring for at least 10 minutes until the solution was uniform;

[0035] 2) Prepare the substrate: select a silicon wafer with a flat and smooth surface as the substrate, after ultrasonic cleaning, evaporate a layer of zinc oxide film (45 nanometers in thickness) on the silicon wafer by magnetron sputtering; wait for the substrate to cool Finally, on the thin film, the photoresist (same as example 1) that one layer of thickness is sprayed on the film is 45 nanometers, then carries out local electron beam exposure on the photoresist, obtains the hole array that average aperture is 300 nanometers;

[0036] 3) Form a zinc oxide array: put the substrate prepared in step 2)...

Embodiment 3

[0039] This example is used to illustrate the preparation method of the zinc oxide micro-nano array provided by the present invention.

[0040] 1) Preparation of precursor solution: 3 grams of Zn(NO 3 ) 2 ·6H 2 O (0.1mol / L) and 0.14 g (CH 2 ) 6 N 4 (0.01mol / L) was added to 100ml deionized water, and kept stirring for at least 10 minutes until the solution was uniform;

[0041] 2) Prepare the substrate: select a silicon wafer with a smooth surface as the substrate, after ultrasonic cleaning, thermally evaporate metal zinc on the silicon wafer, and feed high-temperature oxygen to make it react to form a zinc oxide film (thickness of the film is 15 nanometers); after the substrate is cooled, a layer of photoresist (same as example 1) with a thickness of 45 nanometers is sprayed on the film, and then partial electron beam exposure is carried out on the photoresist to obtain an average aperture of 300 nanometers array of holes;

[0042] 3) Form a zinc oxide array: put the su...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Average pore sizeaaaaaaaaaa
The average diameteraaaaaaaaaa
Lengthaaaaaaaaaa
Login to View More

Abstract

The invention provides a zinc oxide micro-nano array and a preparation method thereof. The method includes steps that firstly, water solution containing Zn(NO3)26H2O and (CH2)6N4 is prepared; secondly, a substrate is prepared, metal zinc is arranged on the surface of a silicon wafer by means of thermal evaporation while oxygen is fed, a zinc oxide film is formed by means of reaction, or a zinc oxide film is formed by means of evaporation by a magnetic sputtering method, after the substrate is cooled, photoresist is sprayed on the film, local electron beam lithography is carried out on the photoresist, and a channel array is obtained; and thirdly, the substrate prepared in the second step is soaked in precursor solution prepared in the first step for 1 hour to 12 hours, and then is taken out and dried by nitrogen after being cleaned, and a zinc oxide array is formed. By controlling reaction conditions, controllable regulation of the diameter of a single zinc oxide line on a zinc oxide nano harness aggregate can be realized.

Description

technical field [0001] The invention relates to a preparation method of a zinc oxide micro-nano array and a zinc oxide micro-nano array prepared by the method. Background technique [0002] ZnO is an important group II-IV direct bandgap wide bandgap semiconductor material. The energy bandgap at room temperature is 3.37eV, and the exciton binding energy is as high as 60meV (GaN is 25meV, ZnSe is 22meV), it can work effectively at room temperature (26meV) and higher temperature, and the optical gain coefficient (300cm -1 ) higher than GaN (100cm -1 ), which makes ZnO quickly become a new international hotspot in the research of short-wavelength semiconductor laser device materials after GaN. [0003] Compared with ordinary ZnO, submicron and nanoscale ZnO exhibit many excellent and special properties, such as piezoelectric properties, near-ultraviolet emission, transparent conductivity, biosafety, and adaptability. These characteristics make it have broad application prospe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01G9/02B82Y40/00
Inventor 李宏宇江鹏于爱芳唐浩颖
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com