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Surface treatment method for improving copper interconnection reliability

A surface treatment and reliability technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve the effects of improving stress migration resistance, improving dielectric breakdown life, and reducing damage

Active Publication Date: 2012-04-18
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In order to overcome the problems caused by the surface treatment technology in the process of manufacturing metal interconnection in the existing semiconductor manufacturing field, the present invention provides a surface that can improve the reliability of metal interconnection and reduce the damage increase of dielectric constant Approach

Method used

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  • Surface treatment method for improving copper interconnection reliability
  • Surface treatment method for improving copper interconnection reliability
  • Surface treatment method for improving copper interconnection reliability

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Embodiment Construction

[0034] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0035] Such as figure 1 As shown, a surface treatment method for improving the reliability of copper interconnection of the present invention comprises the following steps: as figure 2 As shown, in step a, a photoresist material layer is formed on the surface of the low-permittivity dielectric layer 1 formed by chemical vapor deposition or spin coating; a predetermined pattern is formed on the photoresist material layer by photolithography; The dielectric layer is etched from the photoresist material layer to form a patterned groove 2, and the formed patterned groove 2 may be a single-layer damascene structure or a double-layer damascene structure. A composite structure 3 consisting of an adhesion layer, a diffusion barrier layer and a metal seed layer is sequentially formed on the sidewall an...

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Abstract

The invention discloses a surface treatment method for improving copper interconnection reliability. The surface treatment method comprises the following steps of: a. forming a patterned groove on a dielectric layer and embedding metal in the patterned groove; b. removing residual metal in the embedding process in the step a; and c. removing residues and metal oxides on the surface by mixed gas. The invention has the benefits that oxides on the surface of a copper metal layer and residues in the chemical mechanical polishing process can be removed, thereby an atomic-scale cleaning surface is obtained; in addition, the bonding force of the cleaning surface and a nitride-containing barrier layer on the lower layer of the cleaning surface is improved, so that the copper interconnected electromigration resistant performance is improved, the stress resistant performance is improved and the dielectric breakdown life of a dielectric layer is prolonged; meanwhile, the damage to the dielectric layer in the prior art can be reduced and the improvement on the integrated performance of a chip is facilitated.

Description

technical field [0001] The invention relates to a surface treatment method, in particular to a surface treatment method for improving the reliability of copper interconnection in the process of manufacturing metal interconnection lines in the semiconductor manufacturing field. Background technique [0002] In the semiconductor integrated circuit industry, high-performance integrated circuit chips require the lowest possible connection capacitance resistance signal delay and signal crosstalk. For this reason, low-resistivity copper metal lines and interlayers and interlines of wirings are filled with low dielectric constant dielectric materials to achieve the purpose of reducing parasitic capacitance and improving device performance. At present, the widely used low dielectric constant insulating dielectric material is carbon-doped porous silicon oxide. With the continuous reduction of dielectric constant requirements, the porosity and carbon content of dielectric materials c...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
Inventor 张亮姬峰胡友存李磊陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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