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In, nb co-doped ZNO-based transparent conductive film and preparation method thereof

A transparent conductive film, co-doping technology, used in ion implantation plating, metal material coating process, coating and other directions

Inactive Publication Date: 2011-12-07
YANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These shortcomings will have a lot of adverse effects on the photoelectric performance of the film

Method used

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  • In, nb co-doped ZNO-based transparent conductive film and preparation method thereof
  • In, nb co-doped ZNO-based transparent conductive film and preparation method thereof
  • In, nb co-doped ZNO-based transparent conductive film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A preparation method of In, Nb co-doped ZnO-based transparent conductive film:

[0021] (1) Prepare In and Nb co-doped ZnO targets, the target size is 30mm in diameter, 3mm in thickness, and the target is made of 1.0wt% In 2 o 3 +2.0wt%Nb 2 o 5 It is ground and mixed with ZnO powder, pressed into shape, and then sintered at 1200°C. Actual weighing: In 2 o 3 0.2577g, Nb 2 o 5 is 0.5155g, and ZnO is 25g.

[0022] (2) Put the In and Nb co-doped ZnO target prepared in step 1, and the quartz wafer substrate cleaned with ultrasonic waves and acetone into the growth chamber of the pulsed laser deposition device, and the distance between the target material and the quartz wafer substrate The distance between them is 4cm, and the vacuum degree of the growth chamber is pumped to a pressure of 8×10 -4 Pa, the substrate temperature is 400°C, oxygen with a purity of 99.99% is introduced into the growth chamber, and the oxygen partial pressure is 6pa, the laser is turned on...

Embodiment 2

[0025] The preparation method is the same as that in Example 1, except that it is grown on a glass substrate. The resistivity of the In and Nb co-doped ZnO-based transparent conductive film prepared in this example is 9.2×10 -4 Ω·cm, the average light transmittance in the visible region is higher than 87%. After standing for several months, the photoelectric properties of the film did not change significantly.

Embodiment 3

[0027] A preparation method of In, Nb co-doped ZnO-based transparent conductive film:

[0028] (1) Prepare In and Nb co-doped ZnO targets, the target size is 30mm in diameter, 3mm in thickness, and the target is made of 1.5wt%In 2 o 3 +2.0wt%Nb 2 o 5 It is ground and mixed with ZnO powder, pressed into shape, and then sintered at 1250°C. Actual weighing: In 2 o 3 0.3886g, Nb 2 o 5 is 0.5155g, and ZnO is 25g.

[0029] (2) Put the In and Nb co-doped ZnO target prepared in step 1, and the quartz wafer substrate cleaned with ultrasonic waves and acetone into the growth chamber of the pulsed laser deposition device, and the distance between the target material and the quartz wafer substrate The distance between them is 4.5cm, and the vacuum degree of the growth chamber is pumped to a pressure of 8×10 -4Pa, the substrate temperature is 300°C, oxygen with a purity of 99.99% is introduced into the growth chamber, and the oxygen partial pressure is 6pa, the laser is turned on...

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Abstract

A ZnO-based transparent conductive film co-doped with In and Nb and a preparation method thereof, which belong to the field of functional materials. The target material is a ceramic target mixed with high-purity In2O3, Nb2O5 and ZnO powders and solid-phase sintered. Put the In, Nb co-doped ZnO ceramic target and the cleaned substrate into the growth chamber of the pulsed laser deposition device. By adjusting the deposition process parameters, the pulsed laser deposition method is used on different substrates to prepare excellent photoelectric properties. In, Nb co-doped ZnO-based transparent conductive film. The invention simplifies the coating process, and the electron concentration can be controlled by adjusting the content of In and Nb in the target; the simultaneous doping of multiple metal cations on the same target is realized; the prepared In and Nb co-doped ZnO base is transparent The conductive film has excellent photoelectric properties, the resistivity is 10-3-10-4Ω·cm, and the average transmittance of visible light exceeds 87%. The transparent conductive thin film prepared by the method has broad application prospects in the fields of solar cells and new photoelectric devices.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to an In and Nb co-doped ZnO-based transparent conductive film and a preparation method thereof, in particular to a method for preparing an In and Nb co-doped n-type transparent conductive ZnO film by using a pulsed laser deposition method method. Background technique [0002] The transparent conductive film is transparent in the visible light region (T > 80%), cut off in the ultraviolet region, and has a low resistivity (r<10 -4 Ω·cm) a functional film. Transparent conductive films are mainly divided into: metal films, transparent conductive oxides (TCO), polymer films, composite films, and other compound films, among which TCO films are currently the most widely used in industry. [0003] Indium tin oxide (ITO) transparent conductive film is a kind of TCO film, based on its high light transmittance (T > 90 %), low resistivity (r<10 -4 Ω·cm) and easy to etch, it i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/28
Inventor 刘拥军王书昶何军辉
Owner YANGZHOU UNIV
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