Method for manufacturing gallium nitride-based LED (Light Emitting Diode) with vertical structure

Abstract

The invention discloses a method for manufacturing a gallium nitride-based LED (Light Emitting Diode) with a vertical structure. The method comprises the following steps of: (1) extending an n-type semiconductor layer and a p-type semiconductor layer on a sapphire substrate in sequence to form an LED wafer, performing metal evaporation on the surface of the LED wafer and treating in a nitrogen atmosphere at the temperature between 200 DEG C and 400 DEG C for 1-10 minutes to form a p electrode, and partitioning the LED wafer into independent LED chips; (2) evaporating gold layers on the upper surface and the lower surface of a composite metal substrate respectively, wherein the composite metal substrate is made of a copper-molybdenum alloy or an aluminum-silicon alloy; (3) reversely welding the independent LED chips obtained in the step (1) onto the upper surface of the composite metal substrate respectively; (4) stripping substrates of the LED chips; and (5) manufacturing an n-type electrode on an n-type semiconductor material of each LED chip. In the method, a CuMo or AlSi composite metal substrate with high thermal conductivity is taken as a transfer substrate and has a small thermal expansion coefficient difference from a transferred LED chip, the thermal stress is small, and the bonding yield is increased.

Description

technical field [0001] The invention relates to a method for preparing an LED, in particular to a method for preparing a gallium nitride-based LED with a vertical structure. Background technique [0002] China is currently one of the countries with the fastest urbanization process in the world. It can be expected that in the next few decades, the market demand for high-power, high-brightness, and energy-saving LED street lamps across the country will be extremely huge. According to the statistics of the national street lamp industry, there are more than 15 million street lamps for urban road lighting in my country, and the growth rate in recent years has been more than 20%. According to this estimate, the annual market size of lighting street lamps in the country is not less than 5 billion yuan. If LED street lamps are used, more than 2 billion kWh of electricity can be saved every year. One of the core technologies of LED street lamps is the blue light high-power LED chip....

AI Technical Summary

Problems solved by technology

Due to the whole chip bonding (bonding), air bubbles are likely to be generated between the two bonded chips, resulting in weak local bonding, which reduces the yield and reliability of the subsequent chips;

[0007] ③The size of the transfer substrate should not be too large (generally round, with a diameter of less than 100 cm), and cannot be made into shapes other than round

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