Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

N-type single crystal silicon substrate PN junction inversion layer battery and manufacturing method thereof

A manufacturing method and technology of single crystal silicon, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as improvement, battery decline, adverse solar cell efficiency, etc., to improve blue light response, battery efficiency improvement, The effect of increasing the short-circuit current density

Inactive Publication Date: 2011-05-04
ALTUSVIA ENERGY TAICANG
View PDF3 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the phosphorus atoms on the front surface of this N-type crystalline silicon cell can still form boron-oxygen bonds with the oxygen in the substrate under the action of light. Improvement of solar cell efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • N-type single crystal silicon substrate PN junction inversion layer battery and manufacturing method thereof
  • N-type single crystal silicon substrate PN junction inversion layer battery and manufacturing method thereof
  • N-type single crystal silicon substrate PN junction inversion layer battery and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Such as figure 1 A kind of N-type monocrystalline silicon substrate PN junction inversion layer battery shown, it comprises: N-type monocrystalline silicon substrate 1, front electrode, back electrode, front surface Al2O3 thin film film 3 and silicon nitride Thin film 4; front electrode includes: local boron diffusion region 2, Ti / Pb thin film 6 and front surface metal electrode 7; back electrode includes: back surface metal electrode 5 and back surface aluminum oxide film 8.

[0049] The front surface of the N-type single crystal silicon substrate 1 is attached with the front surface aluminum oxide film 3, and the front surface of the front surface aluminum oxide film 3 is attached with a silicon nitride film 4; There is a groove, and the front electrode is arranged in the groove, and the front electrode is arranged sequentially from the inside to the outside: local boron diffusion region 2, Ti / Pb thin film 6 and front surface metal electrode 7; N-type single crystal s...

Embodiment 2

[0069] In this embodiment, the N-type monocrystalline silicon substrate PN junction inversion layer battery is the same as in Embodiment 1, and the manufacturing method of the N-type monocrystalline silicon substrate PN junction inversion layer battery is as follows image 3 As shown, the specific steps are as follows:

[0070] (A) Prepare an N-type single crystal silicon substrate with a resistivity of 6??cm;

[0071] (B) Use potassium hydroxide solution to texture the surface of the N-type single crystal silicon substrate, prepare a pyramid-shaped flame structure on the surface of the N-type single crystal silicon substrate, and use a mixed solution of hydrochloric acid and hydrofluoric acid to carry out Chemical cleaning; the concentration range of potassium hydroxide solution is 2.5%; in the mixed solution of hydrochloric acid and hydrofluoric acid, the ratio of hydrochloric acid: hydrofluoric acid is 1:2.5; the concentration of the mixed solution of hydrochloric acid a...

Embodiment 3

[0087] In this embodiment, the N-type monocrystalline silicon substrate PN junction inversion layer battery is the same as in Embodiment 1, and the manufacturing method of the N-type monocrystalline silicon substrate PN junction inversion layer battery is as follows image 3 As shown, the specific steps are as follows:

[0088] (A) Prepare an N-type single crystal silicon substrate with a resistivity of 5.5 cm;

[0089] (B) Use sodium hydroxide solution to texture the surface of the N-type single crystal silicon substrate, prepare a pyramid-shaped flame structure on the surface of the N-type single crystal silicon substrate, and use a mixed solution of hydrochloric acid and hydrofluoric acid to carry out Chemical cleaning; the concentration range of sodium hydroxide solution is 1%; in the mixed solution of hydrochloric acid and hydrofluoric acid, the ratio of hydrochloric acid: hydrofluoric acid is 1:3; the concentration of the mixed solution of hydrochloric acid and hydrof...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Widthaaaaaaaaaa
Login to View More

Abstract

The invention discloses an N-type single crystal silicon substrate PN junction inversion layer battery, which comprises an N-type single crystal silicon substrate, a front electrode, a rear electrode, a front surface aluminum sesquioxide film and a silicon nitride film, wherein the front electrode comprises a local boron diffusion area, a Ti / Pb film and a front surface metal electrode; and the rear electrode comprises a rear surface metal electrode and a rear surface aluminum sesquioxide film. The invention also discloses a manufacturing method for the N-type single crystal silicon substrate PN junction inversion layer battery. The Al2O3 carries fixed negative charges, a P-type inversion layer is induced on the front surface of the N-type single crystal silicon substrate, and a front electric field is provided; and in the absence of the influence of boron doping, the stability of the battery is improved, meanwhile, the absorption on short wave is reduced, blue light response is improved, the short circuit current density of the battery is improved, and the efficiency of the battery is promoted.

Description

technical field [0001] The invention belongs to the field of solar cell manufacturing, and in particular relates to a structure of an N-type PN junction inversion layer cell and a manufacturing method thereof. Background technique [0002] In the context of energy shortage and increasingly prominent environmental pollution problems, the development of renewable energy has become a major global issue, and the use of solar energy is a key direction for the development of renewable energy. The world photovoltaic market has maintained an average annual growth rate of 30% in the past ten years. The high-speed growth rate of more than 100% has reached an astonishing 152.8% in 2009. Production increased from 7.91GW in 2008 to nearly 20GW in 2009. Compared with foreign advanced cell preparation technology, my country's crystalline silicon solar cell preparation technology is still relatively backward. The basic process consists of texturing, diffusion, etching, deposition of anti-r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0352H01L31/18
CPCY02P70/50
Inventor 高艳涛邢国强张斌陶龙忠沙泉
Owner ALTUSVIA ENERGY TAICANG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com