Surface cleaning method for Ti barrier layer material subjected to chemically mechanical polishing

A chemical-mechanical and barrier-layer technology, applied in chemical instruments and methods, cleaning methods using liquids, cleaning methods and utensils, etc., can solve the problem of uneven distribution of polishing liquid, contamination of metal ions, reduced device yield, and high surface temperature. problems, to achieve the effect of preventing local continuous reaction, good temperature consistency, and reducing damage layer

Inactive Publication Date: 2012-04-18
HEBEI UNIV OF TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the method of cleaning the surface of the Ti barrier layer after batch polishing and production uses water washing. Due to the high temperature, high energy, and high surface tension of the wafer surface, although the polishing stops, the reaction on the wafer surface has a lagging process, and simple water washing cannot Avoid uneven distribution of polishing liquid, contamination of metal ions, etc., so that there is an erosion ring on the surface of the Ti barrier material after cleaning. On an 8-inch chip, there are more than 1,000 particles with a particle size greater than 0.1 micron, which causes subsequent processing. Increase in cost and decrease in device yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface cleaning method for Ti barrier layer material subjected to chemically mechanical polishing
  • Surface cleaning method for Ti barrier layer material subjected to chemically mechanical polishing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) Take 497g of ultrapure water with a resistance of 18MΩ, add 2.5g of surfactant FA / OI type surfactant and 0.5g of FA / O II type chelating agent while stirring, and get a pH value of approximately 6.7 after stirring evenly It is a neutral water-soluble surface cleaner.

[0027] (2) Use the cleaning liquid obtained in step (1) to quickly polish and clean the Ti barrier layer material after alkaline chemical mechanical polishing, with a flow rate of 1000ml / min and a pressure of zero pressure (self-weight pressure), and polishing and cleaning for 30s.

[0028] (3) Dilute 0.5 g of benzotriazole corrosion inhibitor with resistance of 18 MΩ ultrapure water 499.5, quickly carry out zero pressure (self-weight) to the Ti barrier layer material after step (2) cleaning with the diluted benzotriazole solution Pressure) polishing cleaning, the flow rate is 1000ml / min, and the polishing cleaning time is 30s.

[0029] (4) Rinse the Ti barrier layer material cleaned in step (3) for 3...

Embodiment 2

[0032] (1) get the ultrapure water 2054g that resistance is 18MΩ, add surfactant O while stirring π -1042g and 38g of FA / O II type chelating agent, after stirring, the pH value obtained after stirring is 6.9 and is approximately neutral water-soluble surface cleaning liquid.

[0033] (2) Use the cleaning liquid obtained in step (1) to quickly polish and clean the Ti barrier layer material after alkaline chemical mechanical polishing, with a flow rate of 1600ml / min and a pressure of 0.01 atmosphere, and polishing and cleaning for 80s.

[0034] (3) Dilute the hexamethylenetetramine corrosion inhibitor 38g with the ultrapure water 2096g of 18MΩ with the resistance, quickly carry out zero to the Ti barrier layer material after step (2) cleaning with the hexamethylenetetramine solution after dilution Pressure (self-weight pressure) polishing cleaning, the flow rate is 1600ml / min, and the polishing cleaning time is 80s.

[0035] (4) Rinse the Ti barrier layer material cleaned in st...

Embodiment 3

[0038] (1) Take 5643.56g of ultrapure water with a resistance of 18MΩ, add 12.42g of surfactant O-202 and 212.42g of FA / O II type chelating agent while stirring, and get a pH value of 7.3 after stirring evenly, which is approximately neutral. Non-toxic surface cleaner.

[0039] (2) Use the cleaning liquid obtained in step (2) to quickly polish and clean the Ti barrier layer material after alkaline chemical mechanical polishing, with a flow rate of 2800ml / min and a pressure of 0.005 atmospheres, and polishing and cleaning for 130s.

[0040] (3) Dilute the hexamethylenetetramine corrosion inhibitor 212.42g with the ultrapure water 5855.98g of the resistance of 18MΩ, and quickly clean the Ti barrier layer material after the step (2) with the diluted hexamethylenetetramine solution Carry out zero-pressure (self-weight pressure) polishing and cleaning, the flow rate is 2800ml / min, and the polishing and cleaning time is 130s.

[0041] (4) Rinse the Ti barrier layer material cleaned...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical resistanceaaaaaaaaaa
densityaaaaaaaaaa
melting pointaaaaaaaaaa
Login to view more

Abstract

The invention discloses a surface cleaning method for a Ti barrier layer material subjected to chemically mechanical polishing and aims to provide a method which can reduce the subsequent processing cost of alkaline chemically mechanical polishing of the Ti barrier layer material, is easy to use, is practicable and can improve the surface quality of a Ti barrier layer. The method comprises the following steps of: preparing water-soluble surface cleaning solution, namely adding a surfactant and an FA / O II type chelating agent into ultrapure water with the resistance of more than 18 megohms under stirring; uniformly stirring to obtain the water-soluble surface cleaning solution with the pH value of between 6.5 and 7.5; polishing and cleaning the Ti barrier layer material by using the cleaning solution at the high flow speed of between 1,000 and 5,000 ml / min under the low pressure of between 0 and 0.01 atmosphere; polishing and cleaning the Ti barrier layer material by using diluted rustinhibitor solution quickly at the flow speed of between 1,000 and 5,000 ml / min under zero pressure; and washing the Ti barrier layer material by using the ultrapure water with the resistance of more than 18 megohms under zero pressure at the flow speed of between 1,000 and 5,000 ml / min.

Description

technical field [0001] The invention relates to a method for cleaning the surface of a Ti barrier layer material after chemical mechanical polishing. Background technique [0002] Pure titanium is a silver-white metal with many excellent properties. The density of titanium is 4.54g / cm3, which is 43% lighter than steel and slightly heavier than the prestigious light metal magnesium. The mechanical strength is about the same as that of steel, twice that of aluminum and five times that of magnesium. Titanium is resistant to high temperatures, with a melting point of 1942K, which is nearly 1000K higher than gold and nearly 500K higher than steel. Titanium is a chemically active metal. When heated, it can interact with non-metals such as O2, N2, H2, S and halogens. However, at normal temperature, an extremely thin and dense oxide protective film is easy to form on the surface of titanium, which can resist the action of strong acid or even aqua regia, showing strong corrosion ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): B08B3/08
Inventor 刘玉岭王娟边娜何彦刚
Owner HEBEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap