Method for preparing bismuth titanate as visible light response semiconductor photochemical catalyst

Abstract

The invention discloses a method for preparing bismuth titanate as a visible light response semiconductor photochemical catalyst, which comprises the steps of: dissolving bismuth salts in nitric acid at room temperature, dissolving vanadate or metavanadate same mol with the bismuth salts in 60-90 DEG C hot water, and respectively adding benzene or polyethylene glycol or a mixed solution of the benzene and the polyethylene glycol in two solutions obtained from the steps; and dropping vanadium-containing liquid into bismuth-containing liquid under the stirring state, stirring, ageing, filtering, washing and drying to prepare the bismuth titanate BiVO4 as a visible light response semiconductor photochemical catalyst. The BiVO4 prepared by the steps has the advantages of strong response of visual light, high photocatalytic oxidation degrading capability, simple preparation method, short reaction time and easy industrialized production.

Description

technical field [0001] The invention belongs to the technical field of inorganic materials and waste water treatment, and specifically relates to a preparation method of a visible light responsive semiconductor photocatalyst. Background technique [0002] With the development of modern industry, especially the organic chemical industry and printing and dyeing industry, the environmental pollution of human living has become increasingly prominent. For some high-concentration and refractory organic wastewater, it is difficult to achieve ideal results by using traditional chemical and biochemical treatment methods. Since 1972, Fujishima and Honda [Fujishima A, Honda K. Electrochemical photolysis of water at a semiconductor electrode [J]. Nature, 1972, 238: 37~38] in n-type semiconductor TiO 2 Since the photocatalytic decomposition of water to produce hydrogen on single crystal electrodes, the photocatalytic process has become one of the important research directions in the fie...

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Problems solved by technology

[0008] Chinese patent document CN 101318700A (application number 200810048418.4) discloses a bismuth vanadate powder and its preparation method, using a hydrothermal method: cetyltrimethylammonium bromide is added during the synthesis of bismuth vanadate, The precursor of bismuth vanadate is put into a reaction kettle, hydrothermally treated at 80-200°C for 70-75 hours, and bismuth vanadate powder with microspherical and / or micro-flaky particles is obtained after subsequent separation, washing and drying. The prepared bismuth vanadate has high photocatalytic oxygen production activity, but the above hydrothermal treatment method requires a hydrothermal reactor, and the hydrothermal treatment time is too long

[0009] Chinese patent document CN 100488625C (application number 200710118065.6) discloses a method for preparing bismuth vanadate by using microwave method. During the synthesis process, hexadecyltrimethylammonium bromide is added, and the bismuth vanadate precursor is placed in a microwave oven. Microwave power 119W to 280W is heated for 10~40 minutes, then cooled, washed and dried to obtain the finished product. The highest photocatalytic degradation rate of bismuth vanadate to rhodamine B can reach 70% within 2 hours; The price of the microwave generator is expensive, and the volume of the current microwave generator is too small, which limits the BiVO 4 Product output

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