Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of silicon carbide nano-wire

A technology of silicon carbide nanowires and silicon carbon, which is applied in the field of preparation of silicon carbide nanowires, can solve the problems of high equipment requirements, complicated preparation process, and application process limitations, and achieve low production cost, simple equipment, and production short cycle effect

Inactive Publication Date: 2010-07-28
SHANXI INST OF COAL CHEM CHINESE ACAD OF SCI
View PDF5 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the currently published sol-gel carbothermal reduction technology for preparing silicon carbide nanowires, the silicon source used is generally tetraethyl orthosilicate or silica sol, which is expensive and the preparation process is complicated; and cheap silicon ore, quartz, The preparation technology of waste optical fiber and other silicon sources has high requirements on equipment, so these preparation technologies are subject to certain restrictions in the application process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] 1. Weigh 10 grams of phenolic resin and grind to obtain a 20-mesh powder, mix it with 11 grams of industrial water glass, and form a gel under constant stirring.

[0018] 2. The obtained gel was dried at 60° C. for 30 hours.

[0019] 3. Put the dry gel into a tube-type high-temperature furnace, pass in argon gas, raise the temperature to 1200°C, and react at constant temperature for 10 hours, then cool it naturally to room temperature under an argon gas atmosphere.

[0020] 4. The resulting reaction product was oxidized in air at 700°C for 3 hours, then soaked in a mixed acid of hydrochloric acid and hydrofluoric acid with a volume ratio of 1:1.5 for 12 hours, and finally washed, filtered, and dried to obtain a product with a diameter of 30-120nm. , silicon carbide nanowires with micron-scale lengths.

Embodiment 2

[0022] 1. Weigh 15 grams of phenolic resin and grind to obtain a 50-mesh powder, mix it with 50 grams of industrial water glass, and form a gel under constant stirring.

[0023] 2. The resulting gel was dried at 70°C for 24 hours.

[0024] 3. Put the dry gel into a tube-type high-temperature furnace, pass in argon gas, raise the temperature to 1300°C, and react at constant temperature for 7 hours, then cool it naturally to room temperature under an argon gas atmosphere.

[0025] 4. The resulting reaction product was oxidized in air at 600°C for 5 hours, then soaked in a mixed acid of hydrochloric acid and hydrofluoric acid with a volume ratio of 1:2 for 15 hours, and finally washed, filtered, and dried to obtain a product with a diameter of 50-180nm. , silicon carbide nanowires with micron-scale lengths.

Embodiment 3

[0027] 1. Weigh 20 grams of phenolic resin and grind to obtain 80-mesh powder, mix it with 100 grams of industrial water glass, and form a gel under constant stirring.

[0028] 2. The resulting gel was dried at 90°C for 12 hours.

[0029] 3. Put the dry gel into a tube-type high-temperature furnace, pass in argon gas, raise the temperature to 1330°C, and react at constant temperature for 6 hours, then cool it naturally to room temperature under an argon gas atmosphere.

[0030] 4. The obtained reaction product was oxidized in air at 700°C for 4 hours, then soaked in a mixed acid of hydrochloric acid and hydrofluoric acid with a volume ratio of 1:3 for 24 hours, and finally washed, filtered, and dried to obtain a product with a diameter of 60-200nm. , silicon carbide nanowires with micron-scale lengths.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of a silicon carbide nano-wire, which comprises the following steps that: phenolic resin is added into industrial sodium silicate to prepare carbon-silicon gel; the prepared gel is dried for 5 to 30 hours under the temperature of 60 to 110 DEG C; the dried gel is heated to the temperature of 1100 to 1400 DEG C to carry out the carbothermal reduction for 3 to 20 hours under the protection of argon gas, and a primary reaction product is obtained after the reactant is cooled to the room temperature after the reaction; the primary reaction product is roasted for 1 to 5 hours under the temperature of 600 to 800 DEG C so as to remove the carbon which is not reacted; and the primary reaction product is immersed in the mixed acid of the hydrochloric acid and the hydrofluoric acid for 12 to 48 hours so as to remove the surplus silicon dioxide in the product, and then the primary reaction product is washed, filtered and dried to obtain the silicon carbide nano-wire. The preparation method has the advantages of simple process, low cost and large-scale preparation.

Description

technical field [0001] The invention relates to a method for preparing silicon carbide nanowires. Background technique [0002] Silicon carbide (SiC) is a wide-bandgap (2.3ev) semiconductor material with a series of excellent properties, such as oxidation resistance, chemical corrosion resistance, high thermal conductivity (350-490w / mk), and strong thermal stability. One-dimensional silicon carbide nanomaterials have aroused great interest of researchers due to their unique optical, electrical and mechanical properties. One-dimensional silicon carbide nanomaterials have great potential application value in high-temperature, high-frequency, high-power semiconductor devices and nanoscale electronics and optoelectronics. In addition, because silicon carbide nanowires have very high strength and toughness, they can also be widely used as reinforcing agents for ceramics, metals, and polymer matrix composites. Therefore, it is very important to develop a low-cost and large-scale...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B31/36
Inventor 郭向云郝建英靳国强王英勇
Owner SHANXI INST OF COAL CHEM CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com