Magnetic random access memory, magnetic logic device and spinning microwave oscillator

Abstract

The invention discloses a magnetic random access memory unit based on Rashba effect. The magnetic random access memory unit comprises a magnetic multilayer film memory unit and a bit-writing line. The magnetic random access memory unit is characterized in that the magnetic multilayer film memory unit comprises a substrate, a non-magnetic layer, a core functional layer zone and a covering layer from bottom to top; the core functional layer zone comprises a lower magnetic layer, a medium layer and a upper magnetic layer from bottom to top; the bit-writing line is connected with the non-magneticlayer so that write current flows through the non-magnetic layer transversely and the magnetic torque of the lower magnetic layer is reversed, thus writing data. The invention also provides a programmable magnetic logic device and spinning microwave oscillator with the similar structure based on Rashba effect. The invention realizes the separation of reading and writing, can effectively protect the device from damaging during high current density reading or writing and can effectively reduce the current density and increase the maneuverability of the device; and the invention also adopts the design scheme of closed geometry, thus further reducing the interference of magnetic field to the device.

Description

technical field [0001] The invention relates to the field of magnetic random access memory, magnetic logic device and spin microwave oscillator, in particular to magnetic random access memory, magnetic logic device and spin microwave oscillator based on Rashba effect. Background technique [0002] As we all know, giant magnetoresistance effect (Giant Magneto Resistance, GMR) and tunneling magnetoresistance effect (Tunneling Magneto Resistance, TMR) have been widely used in magnetoresistive sensors, magnetic recording and reading heads and other fields, and one of the important The application is Magnetic Random Access Memory (Magnetic Random Access Memory, MRAM). A typical MRAM core structure consists of four parts: bit line (Bit Line), write word line (Word Line), read word line (Read Line) and memory cells. The bit lines, the write word lines, and the read word lines are located above and below the memory cells respectively, in a vertical and horizontal arrangement, and t...

AI Technical Summary

Problems solved by technology

However, in order for the latter to realize the direct current reversal of the magnetic moment, it needs to be as high as 1×10 12 A / m 2 Write current density, although people have reduced the write current density by adopting a ring-shaped memory cell design (see patent application CN1901088), that is, to 1×10 10 A / m 2 , but this magnitude is still very large, which is very unfavorable for the application development of low-power and low-power devices in the future; and when the writing current density of high current density flows through the device, the device structure is easily damaged under high current density. Destruction, affecting the service life of the device under repeated reading and writing also has a great impact

Similarly, in existing spin microwave oscillators (see patent application 200810222965), the trigger current required to achieve magnetic moment precession is usually very large, which also limits the application of the device

Furthermore, similar magnetic logic devices (see patent application PCT / CN2007 / 001174) are also affected by high current density logic inputs, thereby limiting their application range

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