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A Resistive Variable Memory Based on Multiferroic Heterostructure

A resistive memory and heterostructure technology, applied in the storage field, can solve problems such as damage and difficulty in miniaturization, and achieve the effects of fast writing speed, miniaturization, and low power consumption

Active Publication Date: 2020-08-28
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, ferroelectric random access memory based on ferroelectricity still uses charge as a storage medium, which is difficult to miniaturize for destructive reading

Method used

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  • A Resistive Variable Memory Based on Multiferroic Heterostructure
  • A Resistive Variable Memory Based on Multiferroic Heterostructure
  • A Resistive Variable Memory Based on Multiferroic Heterostructure

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Embodiment Construction

[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0031] refer to figure 1 , figure 1 A schematic structural diagram of a resistive memory provided by an embodiment of the present invention, the resistive memory includes:

[0032] substrate1;

[0033] a ferrom...

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Abstract

The present invention provides a resistive variable memory based on a multiferroic heterostructure. The resistive variable memory comprises: a substrate; a ferromagnetic bottom electrode layer disposed on the substrate; a ferromagnetic bottom electrode layer disposed on the ferromagnetic bottom electrode layer The ferroelectric barrier layer on the side away from the substrate, wherein the ferroelectric barrier layer partially covers the ferromagnetic bottom electrode layer; the ferroelectric barrier layer disposed on the side away from the ferromagnetic bottom electrode layer A ferromagnetic top electrode layer, wherein the area of ​​the ferromagnetic top electrode layer is the same as that of the ferroelectric barrier layer; it is arranged on the ferromagnetic bottom electrode layer and surrounds the sidewall of the ferroelectric barrier layer and the insulating layer on the side wall of the ferromagnetic top electrode layer; the contact electrode lead layer arranged on the side of the ferromagnetic top electrode layer away from the ferroelectric barrier layer. The memory has the characteristics of fast writing speed, low writing current density and multiple non-volatile storage states.

Description

technical field [0001] The invention relates to the technical field of storage, and more specifically, relates to a resistive variable memory based on a multiferroic heterostructure. Background technique [0002] Modern memory is developing towards high density, fast speed, low energy consumption, and safety and reliability. However, the pursuit of high-density characteristics requires the continuous reduction of the size of transistors. When reduced to nanometers, many quantum effects will appear, such as quantum tunneling. At this time, traditional silicon-based semiconductor devices will reach the physical and technological limits, so people need to develop new multifunctional materials and information storage and processing technologies. [0003] Flash memory and hard disk are non-volatile storage devices currently used, and the writing speed is relatively slow, on the order of 10 microseconds or even milliseconds. As the next generation of new memory devices, both phas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/02H10N50/10H10N50/80
CPCH10N50/80H10N50/10
Inventor 黄伟川罗振殷月伟李晓光
Owner UNIV OF SCI & TECH OF CHINA
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