Precise polishing cloth and preparation method thereof

A precision polishing, cloth-based technology, applied in the field of precision polishing cloth, can solve the problems affecting the product yield, scratches on glass substrates, low grinding efficiency, etc., and achieves the effect of satisfying the yield, avoiding scratches and good adhesion.

Active Publication Date: 2012-08-08
BEIJING GRISH HITECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are mainly two kinds of grinding materials: one is the grinding belt with polyester film as the base material for grinding and cleaning, and the grinding efficiency is high. Between the belt and the glass substrate, it is easy to cause scratches on the glass substrate, which affects the yield of the product; the other is a grinding belt made of polyurethane pad as the substrate, and the grinding yield is better, but the grinding efficiency is slightly lower

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Precise polishing cloth and preparation method thereof
  • Precise polishing cloth and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0021] The preparation method of the precision polishing cloth comprises the following steps: uniformly mixing the abrasive fine powder with an adhesive and a solvent, and then adding a curing agent to prepare an abrasive slurry; coating the abrasive slurry on the surface of the cloth base; and then curing to form an abrasive slurry. coating.

[0022] Among them, the median particle size of the ground powder is 0.1-20 microns; the adhesive refers to: phenolic resin, polyurethane resin, alkyd resin, epoxy resin, acrylate resin, polyvinyl alcohol, carboxymethyl cellulose, urea- One or a mixture of formaldehyde resin, polyether resin, polyester resin; solvent refers to: ethyl acetate, ether, petroleum ether, toluene, methanol, ethanol, isopropanol, butanone, cyclohexanone , chloroform, tetrahydrofuran in one or more of the mixture, in addition to the above-mentioned organic solvents, the solvent can also be water; curing agent refers to polyisocyanate, polyamide, acid anhydride, ...

Embodiment 1

[0024] In the slurry tank, add 200g of alumina micropowder with a median particle size of 6 microns, 4000g of polyester resin with a solid content of 50%, 3000g of mixed solvent (containing ethyl acetate, toluene, butanone), and 20g of antistatic agent in the slurry tank , 20g dispersant, high-speed stirring and dispersing for 10 minutes, then add 5000g polyisocyanate curing agent (Shanghai Xinguang Chemical Factory), stir evenly to prepare abrasive slurry, apply the abrasive slurry on the surface of the cloth base, and cure it at 130°C for 24 Hour.

Embodiment 2

[0026] In the slurry tank, add 200g of alumina micropowder with a median particle size of 6 microns, 3000g of polyester resin with a solid content of 40%, 3000g of mixed solvent (containing ethyl acetate, toluene, butanone), and 30g of antistatic agent in the slurry tank , 30g dispersant, high-speed stirring and dispersing for 10 minutes, then add 4000g polyisocyanate curing agent (Shanghai Xinguang Chemical Factory), stir evenly to prepare grinding slurry, apply the slurry on the surface of the cloth base, and cure at 130°C for 30 hours .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
diameteraaaaaaaaaa
particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention discloses precise polishing cloth and a preparation method thereof. The polishing cloth comprises a cloth base; the cloth base is made of woven cloth material; the surface of the cloth base is provided with a concave pit woven by meridional yarns and zonal yarns and is also provided with a grinding coating formed by coating grinding slurry with grinding micro-powder and the grindingcoating is provided with a scrap containing pit which corresponds to the concave pit on the surface of the cloth base. The soft and bouncy cloth base is used as a bottom material and the grinding coating on the surface of the cloth base has the scrap containing pit which has the function of collecting grinding scraps produced in the grinding process. The polishing cloth is used for cleaning a base plate before bonding a polaroid in the process of making Cell of TFT-LCD, and can effectively remove impurities such as glass scraps, remnant glue, oil damage and the like on the surface of the baseplate; meanwhile, the grinding scraps produced in the grinding process can be stored in the scrap containing pit, thereby avoiding scratching the glass base plate and meeting the requirements on finished product rate and production efficiency.

Description

technical field [0001] The invention relates to a precision polishing cloth and a preparation method thereof. The polishing cloth is used for cleaning the surface of a substrate before a polarizer is attached in a TFT-LCD manufacturing process of a thin film transistor liquid crystal display. Background technique [0002] In recent years, liquid crystal displays (LCDs) have been widely used, and LCDs have been used in TVs, mobile phones, laptops, cameras, etc., and LCDs have penetrated into various fields of our lives. At present, the most high-end liquid crystal display is a thin film transistor liquid crystal display, that is, TFT-LCD. This type of display has the advantages of light weight, low power consumption, high color fidelity, high brightness, high contrast, high response speed, easy integration and replacement, etc. The advantage is the perfect combination of large-scale semiconductor integrated circuit technology and light source technology. In the TFT-LCD manuf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): B24D11/00B24D11/02B24D18/00C09K3/14B24D3/28
Inventor 张增明葛丙恒
Owner BEIJING GRISH HITECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap