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Method for preparing pressure sensor with nano SiC thin film

A pressure sensor and nanotechnology, applied in the field of pressure sensor preparation, can solve the problems of inability to obtain large-area uniform nano-SiC films, high temperature resistance of devices, poor radiation resistance, and device application limitations, and achieve high electron emission efficiency and low cost. Low, the effect of increasing stability and service life

Inactive Publication Date: 2009-11-25
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003]At present, the preparation of pressure devices is mainly made of Si as the material. The existing problems are that the devices have poor high temperature resistance and radiation resistance, which makes the application of the devices limited. very restrictive
However, none of these methods can obtain large-area uniform nano-SiC films.

Method used

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  • Method for preparing pressure sensor with nano SiC thin film

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Embodiment 1

[0027] A method for preparing a pressure sensor with a nano-SiC thin film, comprising the following steps:

[0028] a. Preparation of nano-SiC slurry

[0029] First, grind nano-SiC, nano-graphite, and ethyl cellulose respectively, and disperse their agglomerates, then mix nano-graphite, nano-SiC, and ethyl cellulose in a ratio of 4:7:8 by weight, and fully stir them evenly. Solute: Add the solute to the terpineol solvent at a weight ratio of 1:5, heat to 380K and stir thoroughly, ultrasonically disperse for 3 hours, then pass through a 400-mesh sieve, and finally cool naturally to room temperature to obtain a nano-SiC slurry for use.

[0030] b. Preparation of cathode emitter plate

[0031] First, a 350-mesh metal screen is selected, and the nano-SiC paste is screen-printed on a conductive glass plate (ie, a substrate), and then thermally sintered. During thermal sintering treatment, first raise the temperature to 325K and keep it for 25 minutes, then raise the temperature t...

Embodiment 2

[0038]A method for preparing a pressure sensor with a nano-SiC thin film, comprising the following steps:

[0039] a. Preparation of nano-SiC slurry

[0040] Grind nano-SiC, nano-graphite, and ethyl cellulose separately first, disperse their agglomerates, then mix nano-graphite, nano-SiC, and ethyl cellulose in a ratio of 4:7:8 by weight, stir well and use it as a solute, Add the solute to the terpineol solvent at a weight ratio of 1:6, heat to 370K and stir thoroughly, ultrasonically disperse for 4 hours, then pass through a 450 mesh sieve, and cool the nano-SiC slurry to room temperature naturally for use.

[0041] b. Preparation of cathode emitter plate

[0042] First, a 300-mesh metal screen is selected, and the nano-SiC paste is screen-printed on a copper plate (ie, a substrate), and then thermally sintered. During thermal sintering treatment, first raise the temperature to 325K and keep it for 30 minutes, then raise the temperature to 450K and keep it for 75 minutes, t...

Embodiment 3

[0049] A method for preparing a pressure sensor with a nano-SiC thin film, comprising the following steps:

[0050] a. Preparation of nano-SiC slurry

[0051] First, grind nano-SiC, nano-graphite, and ethyl cellulose respectively, and disperse their agglomerates, then mix nano-graphite, nano-SiC, and ethyl cellulose in a ratio of 4:7:8 by weight, and fully stir them evenly. Solute: Add the solute to the terpineol solvent at a weight ratio of 1:8, heat to 350K and stir thoroughly, ultrasonically disperse for 5 hours, then pass through a 400-mesh sieve, and finally cool naturally to room temperature to obtain a nano-SiC slurry for use.

[0052] b. Preparation of cathode emitter plate

[0053] First, select a 350-mesh polyester screen, screen-print the nano-SiC paste on a conductive glass plate (ie, the substrate), and then perform thermal sintering. During thermal sintering treatment, first raise the temperature to 325K and keep it for 30 minutes, then raise the temperature to...

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Abstract

The invention relates to the field of pressure sensor design and manufacturing and discloses a method for preparing a pressure sensor with a nano SiC thin film, which comprises the following steps: a, preparing nano SiC slurry; b, preparing a cathode emitter plate; c, preparing an emitter; and d, forming the sensor. The method prepares the nano SiC thin film by screen printing and is low in manufacturing cost; the obtained nano SiC thin film is large in area and uniform; and the manufactured sensor is high in sensitivity, good in stability and long in service life.

Description

technical field [0001] The invention relates to the field of design and manufacture of a pressure sensor, in particular to a preparation method of a pressure sensor with a nano-SiC thin film. Background technique [0002] SiC is the only stable compound of Si and C. The mechanical properties of SiC crystals are second only to diamond. Its corrosion resistance is very strong, and it is hardly affected by any experimental solvent below 1500 °C. It cannot be melted under normal pressure, sublimates when it is higher than 2100°C, and decomposes into Si and C vapors. At 35 atmospheres, the transformation point of SiC was found at 2830°C. The saturation electron drift speed of SiC is twice that of Si, and its dielectric constant is only higher than diamond, slightly higher than GaN, and lower than several commonly used semiconductor materials such as Si and GaAs. So SiC is a very good semiconductor electronic material. At 300K, the thermal conductivity of SiC is 8-10 times hi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/16G01L9/08B82B3/00H01J9/02H01J9/00
Inventor 张秀霞魏舒怡卢秉恒
Owner XI AN JIAOTONG UNIV
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