Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Porous material substrate used in GaN film grown by HVPE method and method thereof

A porous material and substrate technology, which is applied in the field of silicon-based composite nanoporous material substrate and its preparation, can solve the problems of difficult nano-GaN voids and sapphire substrate peeling difficulties, so as to reduce the dislocation density and improve the available Sexuality, the effect of improving crystal quality

Inactive Publication Date: 2009-08-26
DAHOM FUJIAN ILLUMINATION TECH
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the fast growth rate of HVPE, the limitation of this method is that it is still difficult to peel off the sapphire substrate after HVPE epitaxial growth, and it is difficult to completely retain the voids in nano-GaN after growth like MOCVD

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Porous material substrate used in GaN film grown by HVPE method and method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] First grow a layer of GaN film on the Si substrate as a template, and then deposit a thin layer of metal Al with a thickness of about 1 μm on the template by electron beam evaporation, and then put the template with the thin layer of metal Al into the oxalic acid solution ( 0.3mol / L), at room temperature using a voltage of 40 volts for anodization for 40 minutes, and then soak the template in phosphoric acid solution (5wt%) for 30 minutes to remove the part of the aluminum oxide at the bottom of the hole that is in contact with the lower layer of GaN, and then use ICP etc. Dry etching technology, etch to obtain porous GaN material, so that the bottom of the hole is exposed to the surface of the Si substrate; on this basis, use corrosion or electrochemical methods to achieve corrosion of Si and obtain a composite nanoporous structure; then through Surface treatment such that the surface of Si is covered with SiN x or SiO 2 layer to meet the subsequent epitaxial growth r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a nano-porous material substrate used in hydride vapor phase epitaxy (HVPE) gallium nitride (GaN) film and a preparation method thereof. The invention is characterized in that composite nano-porous material is taken as a substrate for epitaxially growth of a thick film GaN, and the quality of crystalloid can be improved, meanwhile, the substrate can be conveniently stripped. A metal Al thin layer is firstly sedimentated on a GaN template taking Si as the substrate, even porous meshed anodic aluminum oxide (AAO) is formed by an electrochemic method, porous GaN material is obtained by erosion of technologies such as induced coupling plasma etching (ICP) and the like, and the bottom of the holes are exposed outside the surface of the Si substrate; on this basis, a corrosion method is adopted to realize the corrosion for Si and obtain the composite nano-porous structure; by the superficial treatment, the Si is covered with a SiNx layer or SiO2 layer, so as to meet the requirements of subsequent epitaxial growth. After being washed, the product is put into an HVPE system, and the thick film GaN layer grows. The invention greatly simplifies the technique for manufacturing a mask film by photoetching, and is suitable for scientific experiments and batch production.

Description

technical field [0001] The invention relates to a silicon-based composite nanoporous material substrate used in growing gallium nitride (GaN) film by a hydride vapor phase epitaxy (HVPE) method and a preparation method thereof. The invention aims at improving the quality of epitaxially grown GaN materials and facilitating the stripping of substrates, and belongs to the technical field of material preparation. Background technique [0002] HVPE is one of the commonly used methods for growing GaN epitaxial materials. It has the characteristics of simple equipment, low price and high growth rate. High-quality thick-film GaN epitaxial layers, followed by exfoliation from foreign substrates, are an excellent route to obtain GaN intrinsic substrates. [0003] The particularity of the application as a substrate requires that the defect density in the epitaxial material, especially the density of line dislocations, should be low and evenly distributed, and the stress in the materia...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B25/18C30B29/20
Inventor 于广辉王新中林朝通曹明霞卢海峰李晓良巩航齐鸣李爱珍
Owner DAHOM FUJIAN ILLUMINATION TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com